Title Gate Dielectrics and MOS ULSIs : Principles, Technologies and Applications Author(s) Hori, Takashi Publication Berlin, Heidelberg, Springer Berlin Heidelberg, 1997. Description XIV, 352 p : online resource Abstract Note Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who wish to know well and go beyond the conventional SiO2 gate dielectric. The topics particularly focus on dielectric films satisfying the superior quality needed for gate dielectrics even in large-scale integration. And since the quality requirements are rather different between device applications, they are selected in an applicatipn-oriented manner, e.g., conventional SiO2 used in CMOS logic circuits, nitrided oxides, which recently became indispensable for flash memories, and composite ONO and ferroelectric films for passive capacitors used in DRAM applications. The book also covers issues common to all gate dielectrics, such as MOSFET physics, evaluation, scaling, and device application/integration for successful development. The information is as up to date as possible, especially for nanometer-range ultrathin gate-dielectric films indispensible in submicrometer ULSIs. The text together with abundant illustrations will take even the inexperienced reader up to the present high state of the art. It is the first book presenting nitrided gate oxides in detail ISBN,Price 9783642608568 Keyword(s) 1. CONDENSED MATTER 2. CONDENSED MATTER PHYSICS 3. EBOOK 4. EBOOK - SPRINGER 5. Electronic materials 6. Optical and Electronic Materials 7. OPTICAL MATERIALS Item Type eBook Multi-Media Links Please Click here for eBook Circulation Data Accession#   Call# Status Issued To Return Due On Physical Location I03466     On Shelf