Title Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions Author(s) Akiba, Kazuto Publication Singapore, Springer Singapore, 2019. Description XXIV, 147 p. 91 illus., 56 illus. in color : online resource Abstract Note This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurement using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly learn typical electronic characters of narrow-gap semiconductor materials, which have recently attract interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to easily understand the high magnetic field and pressure experiments ISBN,Price 9789811371073 Keyword(s) 1. Characterization and Evaluation of Materials 2. EBOOK 3. EBOOK - SPRINGER 4. Electronic materials 5. Interfaces (Physical sciences) 6. MATERIALS SCIENCE 7. Optical and Electronic Materials 8. OPTICAL MATERIALS 9. SEMICONDUCTORS 10. SOLID STATE PHYSICS 11. Surface and Interface Science, Thin Films 12. Surfaces (Physics) 13. THIN FILMS Item Type eBook Multi-Media Links Please Click here for eBook Circulation Data Accession#   Call# Status Issued To Return Due On Physical Location I08661     On Shelf