Title Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets Author(s) Pampill??n Arce, Mar??a ??ngela Publication Cham, Springer International Publishing, 2017. Description XXIII, 164 p. 116 illus., 6 illus. in color : online resource Abstract Note This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint ISBN,Price 9783319666075 Keyword(s) 1. EBOOK 2. EBOOK - SPRINGER 3. ELECTRONIC CIRCUITS 4. Electronic Circuits and Devices 5. Interfaces (Physical sciences) 6. NANOTECHNOLOGY 7. Nanotechnology and Microengineering 8. Surface and Interface Science, Thin Films 9. Surfaces (Physics) 10. THIN FILMS Item Type eBook Multi-Media Links Please Click here for eBook Circulation Data Accession#   Call# Status Issued To Return Due On Physical Location I09358     On Shelf