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| Title | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices |
| Author(s) | Li, Zhiqiang |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 2016. |
| Description | XIV, 59 p. 52 illus., 49 illus. in color : online resource |
| Abstract Note | This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600??? and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8??10???7?????cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node |
| ISBN,Price | 9783662496831 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. ELECTRONIC CIRCUITS
4. Electronic Circuits and Devices
5. Nanoscale science
6. Nanoscale Science and Technology
7. NANOSCIENCE
8. Nanostructures
9. SEMICONDUCTORS
10. SOLID STATE PHYSICS
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| Item Type | eBook |
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Call# | Status | Issued To | Return Due On | Physical Location |
| I10059 |
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