Title Integrated Electronics on Aluminum Nitride : Materials and Devices Author(s) Chaudhuri, Reet Publication Cham, 1. Imprint: Springer 2. Springer International Publishing, 2022. Description XVI, 255 p. 124 illus., 122 illus. in color : online resource Abstract Note This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics ISBN,Price 9783031171994 Keyword(s) 1. EBOOK 2. EBOOK - SPRINGER 3. ELECTRONIC DEVICES 4. ELECTRONICS 5. Electronics and Microelectronics, Instrumentation 6. Microwaves, RF Engineering and Optical Communications 7. SEMICONDUCTORS 8. SOLID STATE PHYSICS 9. TELECOMMUNICATION Item Type Book Multi-Media Links Please Click here for eBook Circulation Data Accession#   Call# Status Issued To Return Due On Physical Location I12362     On Shelf