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501 Madelung, Otfried Semiconductors I00696 1991 eBook  
502 Ferbel, Thomas Techniques and Concepts of High-Energy Physics VI I00680 1991 eBook  
503 Abram, R.A Band Structure Engineering in Semiconductor Microstructures I00659 1989 eBook  
504 McGill, T.C Growth and Optical Properties of Wide-Gap II???VI Low-Dimensional Semiconductors I00604 1989 eBook  
505 Turek, Ilja Electronic Structure of Disordered Alloys, Surfaces and Interfaces I00572 1997 eBook  
506 Ferry, David K Physics of Submicron Devices I00537 1991 eBook  
507 Ferbel, Thomas Techniques and Concepts of High-Energy Physics VII I00475 1994 eBook  
508 Benisty, Henri Confined Photon Systems I00294 1999 eBook  
509 Devreese, J.T Theoretical Aspects and New Developments in Magneto-Optics I00235 1980 eBook  
510 Balkan, N Negative Differential Resistance and Instabilities in 2-D Semiconductors I00231 1993 eBook  
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501.    
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TitleSemiconductors : Group IV Elements and III-V Compounds
Author(s)Madelung, Otfried
PublicationBerlin, Heidelberg, Springer Berlin Heidelberg, 1991.
DescriptionVII, 164 p : online resource
Abstract NoteThe frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt?? Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data oftheirfield of interest the series "Data in Science and Technology"is started now. This first volume presents the most important data on two groups of semiconductors, the elements of the IVth group of the periodic system and the III-V compounds. All data were compiled from information on about 2500 pages in various volumes of the New Series of Landolt-Bornstein. For each critically chosen data set and each figure the original literature is cited. In addition, tables of content refer to the handbooks the data were drawn from. Thus the presentation of data in this volume is of the same high quality standard as in the original evaluated data collections. We hope to meet the needs of the physical community with the volumes of the series "Data in Science and Technology", forming bridges between the laboratory and additional information sources in the libraries
ISBN,Price9783642456817
Keyword(s)1. EBOOK 2. EBOOK - SPRINGER 3. Electronic materials 4. Optical and Electronic Materials 5. OPTICAL MATERIALS 6. PHYSICS 7. Physics, general
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I00696     On Shelf    

502.     
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TitleTechniques and Concepts of High-Energy Physics VI
Author(s)Ferbel, Thomas
PublicationNew York, NY, Springer US, 1991.
Description448 p : online resource
Abstract NoteThe sixth Advanced Study Institute (ASI) on Techniques and Concepts of High Energy Physics was held at the Club St. Croix, in St. Croix, U.S. Virgin Islands. The ASI brought together a total of 70 participants, from 21 different countries. Despite logistical problems caused by hurricane Hugo, it was a very successful meeting. Hugo's destruction did little to dampen the dedication of the inspiring lecturers and the exceptional enthusiasm of the student body; nevertheless, the immense damage caused to the beautiful island was very saddening indeed. The primary support for the meeting was again provided by the Scientific Affairs Division of NATO. The ASI was cosponsored by the U.S. Department of Energy, by Fermilab, by the National Science Foundation, and by the University of Rochester. A special contribution from the Oliver S. and Jennie R. Donaldson Charitable Trust provided an important degree of flexibility, as well as support for worthy students from developing countries. As in the case of the previous ASls, the scientific program was designed for advanced graduate students and recent PhD recipients in experimental particle physics. The present volume of lectures should complement the material published in the first five ASls, and prove to be of value to a wider audience of physicists
ISBN,Price9781468460063
Keyword(s)1. EBOOK 2. EBOOK - SPRINGER 3. ELECTRICAL ENGINEERING 4. Electronic materials 5. Heavy ions 6. MATHEMATICAL PHYSICS 7. NUCLEAR PHYSICS 8. Nuclear Physics, Heavy Ions, Hadrons 9. Optical and Electronic Materials 10. OPTICAL MATERIALS 11. Theoretical, Mathematical and Computational Physics
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I00680     On Shelf    

503.     
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TitleBand Structure Engineering in Semiconductor Microstructures
Author(s)Abram, R.A;Jaros, M
PublicationNew York, NY, Springer US, 1989.
Description400 p. 54 illus : online resource
Abstract NoteThis volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc?? tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures
ISBN,Price9781475707700
Keyword(s)1. CONDENSED MATTER 2. CONDENSED MATTER PHYSICS 3. CRYSTALLOGRAPHY 4. Crystallography and Scattering Methods 5. EBOOK 6. EBOOK - SPRINGER 7. ELECTRICAL ENGINEERING 8. Electronic materials 9. MICROSCOPY 10. Optical and Electronic Materials 11. OPTICAL MATERIALS 12. SOLID STATE PHYSICS 13. SPECTROSCOPY 14. Spectroscopy and Microscopy
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504.     
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TitleGrowth and Optical Properties of Wide-Gap II???VI Low-Dimensional Semiconductors
Author(s)McGill, T.C;Sotomayor Torres, C.M;Gebhardt, W
PublicationNew York, NY, Springer US, 1989.
Description349 p : online resource
Abstract NoteThis volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized
ISBN,Price9781468456615
Keyword(s)1. Applied and Technical Physics 2. EBOOK 3. EBOOK - SPRINGER 4. Electronic materials 5. Optical and Electronic Materials 6. OPTICAL MATERIALS 7. PHYSICS
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505.     
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TitleElectronic Structure of Disordered Alloys, Surfaces and Interfaces
Author(s)Turek, Ilja;Drchal, V??clav;Kudrnovsk??, Josef;Sob, Mojm??r;Weinberger, Peter
PublicationNew York, NY, Springer US, 1997.
DescriptionXV, 317 p : online resource
Abstract NoteAt present, there is an increasing interest in the prediction of properties of classical and new materials such as substitutional alloys, their surfaces, and metallic or semiconductor multilayers. A detailed understanding based on a thus of the utmost importance for fu?? microscopic, parameter-free approach is ture developments in solid state physics and materials science. The interrela?? tion between electronic and structural properties at surfaces plays a key role for a microscopic understanding of phenomena as diverse as catalysis, corrosion, chemisorption and crystal growth. Remarkable progress has been made in the past 10-15 years in the understand?? ing of behavior of ideal crystals and their surfaces by relating their properties to the underlying electronic structure as determined from the first principles. Similar studies of complex systems like imperfect surfaces, interfaces, and mul?? tilayered structures seem to be accessible by now. Conventional band-structure methods, however, are of limited use because they require an excessive number of atoms per elementary cell, and are not able to account fully for e.g. substitu?? tional disorder and the true semiinfinite geometry of surfaces. Such problems can be solved more appropriately by Green function techniques and multiple scattering formalism
ISBN,Price9781461562559
Keyword(s)1. Characterization and Evaluation of Materials 2. EBOOK 3. EBOOK - SPRINGER 4. Electronic materials 5. MATERIALS SCIENCE 6. MATHEMATICAL PHYSICS 7. MICROSCOPY 8. Optical and Electronic Materials 9. OPTICAL MATERIALS 10. SOLID STATE PHYSICS 11. SPECTROSCOPY 12. Spectroscopy and Microscopy 13. Theoretical, Mathematical and Computational Physics
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I00572     On Shelf    

506.     
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TitlePhysics of Submicron Devices
Author(s)Ferry, David K;Grondin, Robert O
PublicationNew York, NY, Springer US, 1991.
DescriptionXIII, 402 p : online resource
Abstract NoteThe purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand?? ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips
ISBN,Price9781461532842
Keyword(s)1. CONDENSED MATTER 2. CONDENSED MATTER PHYSICS 3. CRYSTALLOGRAPHY 4. Crystallography and Scattering Methods 5. EBOOK 6. EBOOK - SPRINGER 7. ELECTRICAL ENGINEERING 8. Electronic materials 9. MICROSCOPY 10. Optical and Electronic Materials 11. OPTICAL MATERIALS 12. SOLID STATE PHYSICS 13. SPECTROSCOPY 14. Spectroscopy and Microscopy
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I00537     On Shelf    

507.     
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TitleTechniques and Concepts of High-Energy Physics VII
Author(s)Ferbel, Thomas
PublicationNew York, NY, Springer US, 1994.
DescriptionX, 266 p : online resource
Abstract NoteThe seventh Advanced Study Institute (ASI) on Techniques and Concepts of High Energy Physics was held for the second time at the Club St. Croix, in St. Croix, U.S. Virgin Islands. The ASI brought together a total of 75 participants, from 19 countries. The primary support for the meeting was again provided by the Scientific Affairs Division of NATO. The ASI was cosponsored by the U.S. Department of Energy, by Fermilab, by the National Science Foundation, and by the University of Rochester. A special contribution from the Oliver S. and Jennie R. Donaldson Charitable Trust provided an important degree of flexibility, as well as support for worthy students from developing countries. As in the case of the previous ASIs, the scientific program was designed for advanced graduate students and recent PhD recipients in experimental particle physics. The present volume of lectures should complement the material published in the first six ASIs, and prove to be of value to a wider audience of physicists
ISBN,Price9781461524199
Keyword(s)1. EBOOK 2. EBOOK - SPRINGER 3. ELECTRICAL ENGINEERING 4. Electronic materials 5. Heavy ions 6. MATHEMATICAL PHYSICS 7. NUCLEAR PHYSICS 8. Nuclear Physics, Heavy Ions, Hadrons 9. Optical and Electronic Materials 10. OPTICAL MATERIALS 11. Theoretical, Mathematical and Computational Physics
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I00475     On Shelf    

508.     
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TitleConfined Photon Systems : Fundamentals and Applications
Author(s)Benisty, Henri;Gerard, Jean-Michel;Houdre, Romuald;Rarity, John;Weisbuch, Claude
PublicationBerlin, Heidelberg, Springer Berlin Heidelberg, 1999.
DescriptionX, 502 p. 169 illus : online resource
Abstract NoteConfined photon system such as microcavities and photonic crystals are currently of great interest, both in terms of fundamental physics and as a result of potential applications. They enable the study of low-dimensional photonic systems, modified light-matter interaction, e.g. between excitons and photons in all-solid-state semiconductor microcavities, and of many phenomena of quantum optics, including single photon generation, squeezed light, quantum state entanglement, non-local quantum measurements, and, potentially, quantum computation. They are also on the verge of yielding new, high performance optical devices for large-scale industries such as telecommunications and display technology. The lectures in this book are organized in a didactic fashion, with a group of in-depth introductory lectures followed by more specialist contributions detailing particular applications of confined photon systems
ISBN,Price9783540483137
Keyword(s)1. EBOOK 2. EBOOK - SPRINGER 3. Electronic materials 4. LASERS 5. Optical and Electronic Materials 6. OPTICAL MATERIALS 7. Optics, Lasers, Photonics, Optical Devices 8. PHOTONICS 9. QUANTUM OPTICS
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I00294     On Shelf    

509.     
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TitleTheoretical Aspects and New Developments in Magneto-Optics
Author(s)Devreese, J.T
PublicationNew York, NY, Springer US, 1980.
DescriptionXI, 626 p : online resource
Abstract NoteThe Advanced Study Institute on "Theoretical Aspects and New Developments in Magneto-Optics" was held at the University of Antwerpen (R.U.C.A.), from July 16 to July 28, 1979. The Institute was sponsored by NATO. Co-sponsors were: Agfa-Gevaert (Belgium), A.S.L.K. (Belgium), Bell Telephone Mfg. CO. (Belgium), Esso Belgium, Generale Bankmaatschappij (Belgium), General Motors (Belgium), I.B.M. (Belgium), Kredietbank (Belgium), Metallurgie Hoboken-Over?? pelt (Belgium), National Science Foundation (U.S.A). A total of 60 lecturers and participants attended the Institute. Scope of the Institute The magneto-optic phenomena are due to the change of the polarizability of a substance as a result of the splitting of the quantized energy bands. Most of these phenomena were discovered during the second half of this century. The understanding of the magneto-optical effects of all kinds, however, was brought by the advent of quantum mechanics, and since then important progress has been made in many fields of experimental methods and techniques
ISBN,Price9781489904546
Keyword(s)1. EBOOK 2. EBOOK - SPRINGER 3. Electronic materials 4. LASERS 5. MICROWAVES 6. Microwaves, RF and Optical Engineering 7. Optical and Electronic Materials 8. OPTICAL ENGINEERING 9. OPTICAL MATERIALS 10. Optics, Lasers, Photonics, Optical Devices 11. PHOTONICS
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I00235     On Shelf    

510.    
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TitleNegative Differential Resistance and Instabilities in 2-D Semiconductors
Author(s)Balkan, N;Ridley, B.K;Vickers, A.J
PublicationNew York, NY, Springer US, 1993.
Description454 p. 21 illus : online resource
Abstract NoteInstabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment
ISBN,Price9781461528227
Keyword(s)1. CONDENSED MATTER 2. CONDENSED MATTER PHYSICS 3. CRYSTALLOGRAPHY 4. Crystallography and Scattering Methods 5. EBOOK 6. EBOOK - SPRINGER 7. ELECTRICAL ENGINEERING 8. Electronic materials 9. MICROSCOPY 10. Optical and Electronic Materials 11. OPTICAL MATERIALS 12. SOLID STATE PHYSICS 13. SPECTROSCOPY 14. Spectroscopy and Microscopy
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I00231     On Shelf    

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