| |
| |
Click the serial number on the left to view the details of the item. |
| # |
Author | Title | Accn# | Year | Item Type | Claims |
| 1 |
Ghatak, Kamakhya Prasad |
Einstein Relation in Compound Semiconductors and Their Nanostructures |
I07688 |
2009 |
eBook |
|
| 2 |
Bhattacharya, Sitangshu |
Effective Electron Mass in Low-Dimensional Semiconductors |
I07087 |
2013 |
eBook |
|
| 3 |
Bhattacharya, Sitangshu |
Fowler-Nordheim Field Emission |
I06040 |
2012 |
eBook |
|
| 4 |
Ghatak, Kamakhya P |
Heavily-Doped 2D-Quantized Structures and the Einstein Relation |
I05868 |
2015 |
eBook |
|
| 5 |
Ghatak, Kamakhya Prasad |
Debye Screening Length |
I05826 |
2014 |
eBook |
|
|
|
1.
  |
 |
| Title | Einstein Relation in Compound Semiconductors and Their Nanostructures |
| Author(s) | Ghatak, Kamakhya Prasad;Bhattacharya, Sitangshu;De, Debashis |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 2009. |
| Description | XX, 458 p. 253 illus : online resource |
| Abstract Note | This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems |
| ISBN,Price | 9783540795575 |
| Keyword(s) | 1. CLASSICAL ELECTRODYNAMICS
2. CONDENSED MATTER
3. CONDENSED MATTER PHYSICS
4. EBOOK
5. EBOOK - SPRINGER
6. ELECTRODYNAMICS
7. ENGINEERING
8. Engineering, general
9. NANOTECHNOLOGY
10. Nanotechnology and Microengineering
11. OPTICS
12. QUANTUM OPTICS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I07688 |
|
|
On Shelf |
|
|
|
|
2.
 |
|
| Title | Effective Electron Mass in Low-Dimensional Semiconductors |
| Author(s) | Bhattacharya, Sitangshu;Ghatak, Kamakhya Prasad |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 2013. |
| Description | XXIV, 536 p : online resource |
| Abstract Note | This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics |
| ISBN,Price | 9783642312489 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. MICROWAVES
5. Microwaves, RF and Optical Engineering
6. Nanoscale science
7. Nanoscale Science and Technology
8. NANOSCIENCE
9. Nanostructures
10. Optical and Electronic Materials
11. OPTICAL ENGINEERING
12. OPTICAL MATERIALS
13. QUANTUM OPTICS
14. SOLID STATE PHYSICS
15. Structural Materials
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I07087 |
|
|
On Shelf |
|
|
|
|
|
3.
|
|
| Title | Fowler-Nordheim Field Emission : Effects in Semiconductor Nanostructures |
| Author(s) | Bhattacharya, Sitangshu;Ghatak, Kamakhya Prasad |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 2012. |
| Description | XXII, 338 p : online resource |
| Abstract Note | This monograph solely presents the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures. The materials considered are quantum confined non-linear optical, III-V, II-VI, Ge, Te, carbon nanotubes, PtSb2, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V, Bi2Te3, III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices under magnetic quantization and quantum wires of the aforementioned superlattices. The FNFE in opto-electronic materials and their quantum confined counterparts is studied in the presence of light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The importance of band gap measurements in opto-electronic materials in the presence of external fields is discussed from this perspective. This monograph contains 200 open research problems which form the very core and are useful for Ph. D students and researchers. The book can also serve as a basis for a graduate course on field emission from solids |
| ISBN,Price | 9783642204937 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. MICROWAVES
5. Microwaves, RF and Optical Engineering
6. Nanoscale science
7. Nanoscale Science and Technology
8. NANOSCIENCE
9. Nanostructures
10. NANOTECHNOLOGY
11. Optical and Electronic Materials
12. OPTICAL ENGINEERING
13. OPTICAL MATERIALS
14. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I06040 |
|
|
On Shelf |
|
|
|
|
|
4.
|
|
| Title | Heavily-Doped 2D-Quantized Structures and the Einstein Relation |
| Author(s) | Ghatak, Kamakhya P;Bhattacharya, Sitangshu |
| Publication | Cham, Springer International Publishing, 2015. |
| Description | XL, 347 p. 58 illus : online resource |
| Abstract Note | This book presents the Einstein Relation(ER) in two-dimensional (2-D) Heavily Doped(HD) Quantized Structures. The materials considered are quantized structures of HD non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, GaP, Gallium Antimonide, II-V, Bismuth Telluride together with various types of HD superlattices and their Quantized counterparts respectively. The ER in HD opto-electronic materials and their nanostructures is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestion for the experimental determination of HD 2D and 3D ERs and the importance of measurement of band gap in HD optoelectronic materials under intense built-in electric field in nanodevices and strong external photo excitation (for measuring photon induced physical properties) are also discussed in this context. The influence of crossed electric and quantizing magnetic fields on the ER of the different 2D HD quantized structures (quantum wells, inversion and accumulation layers, quantum well HD superlattices and nipi structures) under different physical conditions is discussed in detail. This monograph contains 100 open research problems which form the integral part of the text and are useful for both Ph.D aspirants and researchers in the fields of condensed matter physics, solid-state sciences, materials science, nano-science and technology and allied fields |
| ISBN,Price | 9783319083803 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. Nanoscale science
5. Nanoscale Science and Technology
6. NANOSCIENCE
7. Nanostructures
8. NANOTECHNOLOGY
9. Nanotechnology and Microengineering
10. Optical and Electronic Materials
11. OPTICAL MATERIALS
12. SEMICONDUCTORS
13. SOLID STATE PHYSICS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I05868 |
|
|
On Shelf |
|
|
|
|
|
5.
| |
| Title | Debye Screening Length : Effects of Nanostructured Materials |
| Author(s) | Ghatak, Kamakhya Prasad;Bhattacharya, Sitangshu |
| Publication | Cham, Springer International Publishing, 2014. |
| Description | XXXIII, 385 p. 123 illus : online resource |
| Abstract Note | This monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures |
| ISBN,Price | 9783319013398 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. Nanoscale science
5. Nanoscale Science and Technology
6. NANOSCIENCE
7. Nanostructures
8. NANOTECHNOLOGY
9. Optical and Electronic Materials
10. OPTICAL MATERIALS
11. SEMICONDUCTORS
12. SOLID STATE PHYSICS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I05826 |
|
|
On Shelf |
|
|
|
| |