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 #  AuthorTitleAccn#YearItem Type Claims
1 Govindhan Dhanaraj ... (ed.) Springer handbook of crystal growth I01418 2010 eBook  
2 Dirk Ehrentraut (ed.) Technology of gallium nitride crystal growth I01225 2010 eBook  
3 Arkady E. Glikin Polymineral-metasomatic crystallogenesis I00982 2009 eBook  
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TitleSpringer handbook of crystal growth
Author(s)Govindhan Dhanaraj ... (ed.)
PublicationHeidelberg, Springer, 2010.
Description1 online resource (xxxviii, 1816 p.) : ill
Contents NoteCover13; -- Preface -- About the Editors -- List of Authors -- Contents -- List of Abbreviations -- Part A Fundamentals of Crystal Growth and Defect Formation -- 1 Crystal Growth Techniques and Characterization: An Overview -- 1.1 Historical Developments -- 1.2 Theories of Crystal Growth -- 1.3 Crystal Growth Techniques -- 1.4 Crystal Defects and Characterization -- References -- 2 Nucleation at Surfaces -- 2.1 Equilibrium Crystal8211;Ambient Phase -- 2.2 Work for Nucleus Formation -- 2.3 Rate of Nucleation -- 2.4 Saturation Nucleus Density -- 2.5 Second-Layer Nucleation in Homoepitaxy -- 2.6 Mechanism of Clustering in Heteroepitaxy -- 2.7 Effect of Surfactants on Nucleation -- 2.8 Conclusions and Outlook -- References -- 3 Morphology of Crystals Grown from Solutions -- 3.1 Equilibrium Shape -- 3.2 The Theoretical Growth Shape -- 3.3 Factors Influencing the Crystal Habit -- 3.4 Surface Structure -- 3.5 Crystal Defects -- 3.6 Supersaturation 8211; Growth Kinetics -- 3.7 Solvent -- 3.8 Impurities -- 3.9 Other Factors -- 3.10 Evolution of Crystal Habit -- 3.11 A Short Conclusion -- 3.A Appendix -- References -- 4 Generation and Propagation of Defects During Crystal Growth -- 4.1 Overview -- 4.2 Inclusions -- 4.3 Striations and Growth Sectors -- 4.4 Dislocations -- 4.5 Twinning -- 4.6 Perfection of Crystals Grown Rapidly from Solution -- References -- 5 Single Crystals Grown Under Unconstrained Conditions -- 5.1 Background -- 5.2 Smooth and Rough Interfaces: Growth Mechanism and Morphology -- 5.3 Surface Microtopography -- 5.4 Growth Forms of Polyhedral Crystals -- 5.5 Internal Morphology -- 5.6 Perfection of Single Crystals -- References -- 6 Defect Formation During Crystal Growth from the Melt -- 6.1 Overview -- 6.2 Point Defects -- 6.3 Dislocations -- 6.4 Second-Phase Particles -- 6.5 Faceting -- 6.6 Twinning -- 6.7 Summary -- References -- Part B Crystal Growth from Melt Techniques -- 7 Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields -- 7.1 Historical Overview -- 7.2 Magnetic Liquid-Encapsulated Growth -- 7.3 Magnetic Field Interactions with the Melt -- 7.4 Dislocation Density -- 7.5 Magnetic Field Effects on Impurity Segregation -- 7.6 Optical Characterization of InP:Fe -- 7.7 Summary -- References -- 8 Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications -- 8.1 Silicon Single Crystals for LSIs and Solar Applications -- 8.2 Control of Crystal Defects in Czochralski Silicon -- 8.3 Growth and Characterization of Silicon Multicrystal for Solar Cell Applications -- 8.4 Summary -- References -- 9 Czochralski Growth of Oxide Photorefractive Crystals -- 9.1 Background -- 9.2 Crystal Growth -- 9.3 Design and Development of Czochralski Growth System -- 9.4 Growth of Lithium Niobate Crystals and Its Characteristics -- 9.5 Other Oxide Photorefractive Crystals -- 9.6 Growth of Sillenite Crystals and Its Characteristics -- 9.7 Conclusions -- References -- 10 Bulk Crystal Growth of Ternary III8211;V Semiconductors -- 10.1 III8211;V Ternary Semiconductors -- 10.2 Need for Ternary Substrates -- 10.3 Criteria for Device-Grade Ternary Substrates -- 10.4 Introduction to Bridgman Crystal Growth Techniques -- 10.5 Overview of III8211
NotesIncludes bibliographical references and index
Keyword(s)1. Crystal growth 2. EBOOK 3. EBOOK - SPRINGER 4. SCIENCE
Item TypeeBook
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Accession#  Call#StatusIssued ToReturn Due On Physical Location
I01418     On Shelf    

2.     
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TitleTechnology of gallium nitride crystal growth
Author(s)Dirk Ehrentraut (ed.);Elke Meissner (ed.);Michal Bockowski (ed.)
PublicationBerlin, Springer-Verlag, 2010.
Description1 online resource (xxi, 326 p.) : ill. (some col.)
Contents NoteCover13; -- Technology of Gallium Nitride Crystal Growth13; -- Foreword13; -- Preface Editors13; -- Contents13; -- Contributors13; -- Part I Market for Bulk GaN Crystals -- 1 Development of the Bulk GaN Substrate Market -- 1.1 Introduction -- 1.2 III-N Device Market Drivers and Forecast -- 1.3 Benefits and Importance of Bulk GaN Substrates -- 1.4 GaN Device Trends for Bulk GaN Substrates -- 1.5 Bulk GaN Substrate Trends -- 1.6 Summary -- References -- Part II Vapor Phase Growth Technology -- 2 Hydride Vapor Phase Epitaxy of GaN -- 2.1 Introduction -- 2.2 Thermodynamic Analysis on HVPE Growth of GaN -- 2.3 Cubic GaN Epitaxial Growth on (100) GaAs Substrate -- 2.4 Comparison of GaN Growth on (111)A and (111)B GaAs Substrates -- 2.5 Ab Initio Calculations of GaN Initial Growth Processes on (111)A and (111)B GaAs Surfaces -- 2.6 Thick GaN Growth on (111)A GaAs Substrate -- 2.7 Preparation of Fe-Doped Semi-insulating GaN Substrates -- References -- 3 Growth of Bulk GaN Crystals by HVPE on SingleCrystalline GaN Seeds -- 3.1 Introduction -- 3.2 Experimental -- 3.3 Experimental Results -- 3.4 Conclusions -- References -- 4 Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology -- 4.1 Introduction -- 4.2 Outline of the HVPE-VAS Technology -- 4.3 Preparation of a GaN Template with a Porous TiN Film -- 4.4 HVPE Growth on GaN Templates with a Porous TiN Film -- 4.5 Properties of GaN Wafers Fabricated by HVPE8211;VAS Technology -- 4.6 Summary -- References -- 5 Nonpolar and Semipolar GaN Growth by HVPE -- 5.1 Introduction -- 5.2 Heteroepitaxial Films, Including Substrate Selection -- 5.3 Lateral Epitaxial Overgrowth of Nonpolar, Semipolar GaN -- 5.4 Conclusions and Future Development -- References -- 6 High Growth Rate MOVPE -- 6.1 Introduction -- 6.2 Growth Characteristics of AlGaN and GaNby Conventional MOVPE -- 6.3 Quantum Chemical Study of Vapor-Phase Reaction -- 6.4 Result of High-Growth-Rate GaN by Usinga High-Flow-speed Reactor -- 6.5 Discussion and Summary -- References -- Part III Solution Growth Technology -- 7 Ammonothermal Growth of GaN UnderAmmono-Basic Conditions -- 7.1 Introduction -- 7.2 The Growth Method -- 7.3 Crystal Characterization -- 7.4 Homoepitaxy on Ammonothermal GaN -- 7.5 Conclusions -- References -- 8 A Pathway Toward Bulk Growth of GaNby the Ammonothermal Method -- 8.1 Introduction -- 8.2 Impact of Mineralizer on AmmonothermalSynthesis of GaN -- 8.3 Solubility of GaN in Ammonobasic Solutions -- 8.4 Seeded Growth of GaN with Metallic Ga Nutrient -- 8.5 Seeded Growth of GaN with Polycrystalline GaN Nutrient -- 8.6 Growth of Bulk GaN Crystals and Sliced Wafers -- 8.7 Summary -- References -- 9 Acidic Ammonothermal Growth Technology for GaN -- 9.1 Introduction -- 9.2 Brief History of the Ammonothermal GrowthTechnique of GaN -- 9.3 Growth Technology -- 9.4 Chemistry of the Solution and Growth Mechanism -- 9.5 Properties of Ammonothermal GaN -- 9.6 Prospects and Future developmentsfor Ammonothermal GaN -- References -- Part IV Flux Growth Technology -- 10 High Pressure Solution Growth of Gallium Nitride -- 10.1 Introduction -- 10.2 Growth Method -- 10.3 Spontaneous Crystallization by HPS Growth Method -- 10.4 Seeded Growth by HPS Method -- 10.5 Applications of Pressure Grown GaN Substrates: Blue Las
NotesIncludes bibliographical references and index
Keyword(s)1. Crystal growth 2. EBOOK 3. EBOOK - SPRINGER 4. ELECTRICAL ENGINEERING 5. ENGINEERING 6. Gallium nitride 7. SCIENCE 8. SEMICONDUCTORS 9. TECHNOLOGY & ENGINEERING
Item TypeeBook
Multi-Media Links
Please Click Here for the Online Book
Circulation Data
Accession#  Call#StatusIssued ToReturn Due On Physical Location
I01225     On Shelf    

3.    
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TitlePolymineral-metasomatic crystallogenesis
Author(s)Arkady E. Glikin
PublicationDordrecht, Springer, 2009.
Description1 online resource (xiv, 312 p.) : ill
Abstract NoteDiscusses polymineral crystallogenesis in solutions that typically occur in nature. This book describes the effects, laws, and mechanisms of a meta somatic crystal replacement, joint crystal growth of different phases, mixed crystal formation, and aggregate re-crystallization. It is suitable for chemists, geologists, and physicists
Contents NoteReplacement of monocrystals -- Joint growth of crystals of different phases -- Formation of mixed crystals in solutions -- Physicochemical analysis of metasomatic crystallogenesis -- Metasomatic transformation of aggregates -- Epitaxy and quasiepitaxy in solutions -- Crystal faceting
NotesIncludes bibliographical references and index
Keyword(s)1. Crystal growth 2. CRYSTALLOGRAPHY 3. EBOOK 4. EBOOK - SPRINGER 5. INORGANIC CHEMISTRY 6. Metasomatism (Mineralogy) 7. SCIENCE
Item TypeeBook
Multi-Media Links
Please Click Here for the Online Book
Circulation Data
Accession#  Call#StatusIssued ToReturn Due On Physical Location
I00982     On Shelf    

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