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Author | Title | Accn# | Year | Item Type | Claims |
1 |
Lacava, Francesco |
Classical Electrodynamics |
I10298 |
2016 |
eBook |
|
2 |
Shin, Changhwan |
Variation-Aware Advanced CMOS Devices and SRAM |
I10278 |
2016 |
eBook |
|
3 |
Jahanian, Ali |
Quantifying Aesthetics of Visual Design Applied to Automatic Design |
I10265 |
2016 |
eBook |
|
4 |
Egorov, Nikolay |
Field Emission Electronics |
I10226 |
2017 |
eBook |
|
5 |
Galati, Gaspare |
100 Years of Radar |
I10193 |
2016 |
eBook |
|
6 |
Venghaus, Herbert |
Fibre Optic Communication |
I10115 |
2017 |
eBook |
|
7 |
Li, Zhiqiang |
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices |
I10059 |
2016 |
eBook |
|
8 |
Park, Byung-Eun |
Ferroelectric-Gate Field Effect Transistor Memories |
I10043 |
2016 |
eBook |
|
9 |
Zhu, Min |
Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications |
I09964 |
2017 |
eBook |
|
10 |
Iftikhar, Zubair |
Charge Quantization and Kondo Quantum Criticality in Few-Channel Mesoscopic Circuits |
I09929 |
2018 |
eBook |
|
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1.
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Title | Classical Electrodynamics : From Image Charges to the Photon Mass and Magnetic Monopoles |
Author(s) | Lacava, Francesco |
Publication | Cham, Springer International Publishing, 2016. |
Description | XIV, 195 p. 57 illus., 7 illus. in color : online resource |
Abstract Note | This book proposes intriguing arguments that will enable students to achieve a deeper understanding of electromagnetism, while also presenting a number of classical methods for solving difficult problems. Two chapters are devoted to relativistic electrodynamics, covering all aspects needed for a full comprehension of the nature of electric and magnetic fields and, subsequently, electrodynamics. Each of the two final chapters examines a selected experimental issue, introducing students to the work involved in actually proving a law or theory. Classical books on electricity and magnetism are mentioned in many references, helping to familiarize students with books that they will encounter in their further studies. Various problems are presented, together with their worked-out solutions. The book is based on notes from special lectures delivered by the author to students during the second year of a BSc course in Physics, but the subject matter may also be of interest to senior physicists, as many of the themes covered are completely ignored or touched only briefly in standard textbooks |
ISBN,Price | 9783319394749 |
Keyword(s) | 1. CLASSICAL ELECTRODYNAMICS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRODYNAMICS
5. ELECTRONIC CIRCUITS
6. Electronic Circuits and Devices
7. Mathematical Methods in Physics
8. MICROWAVES
9. Microwaves, RF and Optical Engineering
10. OPTICAL ENGINEERING
11. OPTICS
12. PHYSICS
|
Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I10298 |
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On Shelf |
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2.
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Title | Variation-Aware Advanced CMOS Devices and SRAM |
Author(s) | Shin, Changhwan |
Publication | Dordrecht, Springer Netherlands, 2016. |
Description | VII, 140 p. 118 illus., 101 illus. in color : online resource |
Abstract Note | This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM |
ISBN,Price | 9789401775977 |
Keyword(s) | 1. CIRCUITS AND SYSTEMS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRONIC CIRCUITS
5. Electronic Circuits and Devices
6. ELECTRONICS
7. Electronics and Microelectronics, Instrumentation
8. MICROELECTRONICS
9. SEMICONDUCTORS
|
Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I10278 |
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On Shelf |
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3.
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Title | Quantifying Aesthetics of Visual Design Applied to Automatic Design |
Author(s) | Jahanian, Ali |
Publication | Cham, Springer International Publishing, 2016. |
Description | XIV, 137 p. 45 illus., 42 illus. in color : online resource |
Abstract Note | In this thesis, the author makes several contributions to the study of design of graphical materials. The thesis begins with a review of the relationship between design and aesthetics, and the use of mathematical models to capture this relationship. Then, a novel method for linking linguistic concepts to colors using the Latent Dirichlet Allocation Dual Topic Model is proposed. Next, the thesis studies the relationship between aesthetics and spatial layout by formalizing the notion of visual balance. Applying principles of salience and Gaussian mixture models over a body of about 120,000 aesthetically rated professional photographs, the author provides confirmation of Arnhem's theory about spatial layout. The thesis concludes with a description of tools to support automatically generating personalized design. Nominated as an outstanding Ph.D. thesis by Purdue University, USA Focuses on the automatic design of visual media and the quantification of such designs' aesthetics Tackles the understanding of visual design concepts and principles to create solutions and interactions for users who are part of the design creation system Proposes approaches toward understanding design thinking in design of self-publishing media |
ISBN,Price | 9783319314860 |
Keyword(s) | 1. Computational linguistics
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRONIC CIRCUITS
5. Electronic Circuits and Devices
6. Electronic materials
7. Optical and Electronic Materials
8. OPTICAL MATERIALS
|
Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I10265 |
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On Shelf |
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4.
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Title | Field Emission Electronics |
Author(s) | Egorov, Nikolay;Sheshin, Evgeny |
Publication | Cham, Springer International Publishing, 2017. |
Description | XIV, 568 p. 328 illus., 21 illus. in color : online resource |
Abstract Note | This book is dedicated to field emission electronics, a promising field at the interface between ???classic??? vacuum electronics and nanotechnology. In addition to theoretical models, it includes detailed descriptions of experimental and research techniques and production technologies for different types of field emitters based on various construction principles. It particularly focuses on research into and production of field cathodes and electron guns using recently developed nanomaterials and carbon nanotubes. Further, it discusses the applications of field emission cathodes in new technologies such as light sources, flat screens, microwave and X-ray devices |
ISBN,Price | 9783319565613 |
Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. ELECTRONIC CIRCUITS
4. Electronic Circuits and Devices
5. Electronic materials
6. ELECTRONICS
7. Electronics and Microelectronics, Instrumentation
8. MICROELECTRONICS
9. NANOTECHNOLOGY
10. Nanotechnology and Microengineering
11. Optical and Electronic Materials
12. OPTICAL MATERIALS
13. SEMICONDUCTORS
|
Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I10226 |
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On Shelf |
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5.
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Title | 100 Years of Radar |
Author(s) | Galati, Gaspare |
Publication | Cham, Springer International Publishing, 2016. |
Description | XVIII, 399 p. 241 illus : online resource |
Abstract Note | This book offers fascinating insights into the key technical and scientific developments in the history of radar, from the first patent, taken out by H??lsmeyer in 1904, through to the present day. Landmark events are highlighted and fascinating insights provided into the exceptional people who made possible the progress in the field, including the scientists and technologists who worked independently and under strict secrecy in various countries across the world in the 1930s and the big businessmen who played an important role after World War II. The book encourages multiple levels of reading. The author is a leading radar researcher who is ideally placed to offer a technical/scientific perspective as well as a historical one. He has taken care to structure and write the book in such a way as to appeal to both non-specialists and experts. The book is not sponsored by any company or body, either formally or informally, and is therefore entirely unbiased. The text is enriched by approximately three hundred images, most of which are original and have been accessed by detailed searches in the archives |
ISBN,Price | 9783319005843 |
Keyword(s) | 1. Aerospace engineering
2. Aerospace Technology and Astronautics
3. ASTRONAUTICS
4. EBOOK
5. EBOOK - SPRINGER
6. ELECTRONIC CIRCUITS
7. Electronic Circuits and Devices
8. HISTORY
9. History and Philosophical Foundations of Physics
10. HISTORY OF SCIENCE
11. PHYSICS
|
Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I10193 |
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On Shelf |
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6.
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Title | Fibre Optic Communication : Key Devices |
Author(s) | Venghaus, Herbert;Grote, Norbert |
Publication | Cham, Springer International Publishing, 2017. |
Description | XXXV, 847 p. 552 illus., 330 illus. in color : online resource |
Abstract Note | The book gives an in-depth description of key devices of current and next generation fibre optic communication networks. Devices treated include semiconductor lasers, optical amplifiers, modulators, wavelength filters and other passives, detectors, all-optical switches, but relevant properties of optical fibres and network aspects are included as well. The presentations include the physical principles underlying the various devices, technologies used for their realization, typical performance characteristics and limitations, but development trends towards more advanced components are also illustrated. This new edition of a successful book was expanded and updated extensively. The new edition covers among others lasers for optical communication, optical switches, hybrid integration, monolithic integration and silicon photonics. The main focus is on Indium phosphide-based structures but silicon photonics is included as well. The book covers relevant principles, state-of-the-art implementations, status of current research as well as expected future components |
ISBN,Price | 9783319423678 |
Keyword(s) | 1. CLASSICAL ELECTRODYNAMICS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRODYNAMICS
5. ELECTRONIC CIRCUITS
6. Electronic Circuits and Devices
7. MICROWAVES
8. Microwaves, RF and Optical Engineering
9. OPTICAL ENGINEERING
10. OPTICS
|
Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I10115 |
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On Shelf |
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7.
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Title | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices |
Author(s) | Li, Zhiqiang |
Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 2016. |
Description | XIV, 59 p. 52 illus., 49 illus. in color : online resource |
Abstract Note | This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600??? and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8??10???7?????cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node |
ISBN,Price | 9783662496831 |
Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. ELECTRONIC CIRCUITS
4. Electronic Circuits and Devices
5. Nanoscale science
6. Nanoscale Science and Technology
7. NANOSCIENCE
8. Nanostructures
9. SEMICONDUCTORS
10. SOLID STATE PHYSICS
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Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I10059 |
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On Shelf |
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8.
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Title | Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications |
Author(s) | Park, Byung-Eun;Ishiwara, Hiroshi;Okuyama, Masanori;Sakai, Shigeki;Yoon, Sung-Min |
Publication | Dordrecht, Springer Netherlands, 2016. |
Description | XVIII, 347 p. 254 illus., 150 illus. in color : online resource |
Abstract Note | This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films |
ISBN,Price | 9789402408416 |
Keyword(s) | 1. CIRCUITS AND SYSTEMS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRONIC CIRCUITS
5. Electronic Circuits and Devices
6. ELECTRONICS
7. Electronics and Microelectronics, Instrumentation
8. Interfaces (Physical sciences)
9. Materials???Surfaces
10. MICROELECTRONICS
11. Surface and Interface Science, Thin Films
12. Surfaces (Physics)
13. Surfaces and Interfaces, Thin Films
14. THIN FILMS
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Item Type | eBook |
Multi-Media Links
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Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I10043 |
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On Shelf |
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9.
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Title | Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications |
Author(s) | Zhu, Min |
Publication | Singapore, Springer Singapore, 2017. |
Description | XVI, 124 p. 83 illus : online resource |
Abstract Note | This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications |
ISBN,Price | 9789811043826 |
Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. ELECTRONIC CIRCUITS
4. Electronic Circuits and Devices
5. ELECTRONICS
6. Electronics and Microelectronics, Instrumentation
7. MICROELECTRONICS
8. Phase transitions (Statistical physics)
9. Phase Transitions and Multiphase Systems
10. SEMICONDUCTORS
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Item Type | eBook |
Multi-Media Links
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Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I09964 |
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On Shelf |
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10.
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Title | Charge Quantization and Kondo Quantum Criticality in Few-Channel Mesoscopic Circuits |
Author(s) | Iftikhar, Zubair |
Publication | Cham, Springer International Publishing, 2018. |
Description | XIII, 137 p. 73 illus., 47 illus. in color : online resource |
Abstract Note | This thesis explores several fundamental topics in mesoscopic circuitries that incorporate few electronic conduction channels. The reported results establish a new state of the art in a field that has been waiting for this kind of experiments for decades. The first experiments address the quantized character of charge in circuits. The thesis discusses the charge quantization criterion, observes the predicted charge quantization scaling, and demonstrates a crossover toward a universal behavior as temperature is increased. In turn, the second set of experiments explores the unconventional quantum critical physics that arises in the multichannel Kondo model. At the symmetric quantum critical point, the predicted universal Kondo fixed points and scaling exponents are observed, and the full numerical renormalization group scaling curves validated. In addition, the thesis explores the crossover from quantum criticality: direct visualization of the development of a quantum phase transition, the parameter space for quantum criticality, as well as universality and scaling behaviors |
ISBN,Price | 9783319946856 |
Keyword(s) | 1. Condensed materials
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRONIC CIRCUITS
5. Electronic Circuits and Devices
6. LOW TEMPERATURE PHYSICS
7. LOW TEMPERATURES
8. Phase transformations (Statistical physics)
9. Quantum Gases and Condensates
10. QUANTUM PHYSICS
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Item Type | eBook |
Multi-Media Links
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Circulation Data
Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
I09929 |
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On Shelf |
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