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Author | Title | Accn# | Year | Item Type | Claims |
| 1 |
Park, Byung-Eun |
Ferroelectric-Gate Field Effect Transistor Memories |
I10043 |
2016 |
eBook |
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| 2 |
Park, Byung-Eun |
Ferroelectric-Gate Field Effect Transistor Memories |
I09206 |
2020 |
eBook |
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1.
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| Title | Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications |
| Author(s) | Park, Byung-Eun;Ishiwara, Hiroshi;Okuyama, Masanori;Sakai, Shigeki;Yoon, Sung-Min |
| Publication | Dordrecht, Springer Netherlands, 2016. |
| Description | XVIII, 347 p. 254 illus., 150 illus. in color : online resource |
| Abstract Note | This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films |
| ISBN,Price | 9789402408416 |
| Keyword(s) | 1. CIRCUITS AND SYSTEMS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRONIC CIRCUITS
5. Electronic Circuits and Devices
6. ELECTRONICS
7. Electronics and Microelectronics, Instrumentation
8. Interfaces (Physical sciences)
9. Materials???Surfaces
10. MICROELECTRONICS
11. Surface and Interface Science, Thin Films
12. Surfaces (Physics)
13. Surfaces and Interfaces, Thin Films
14. THIN FILMS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I10043 |
|
|
On Shelf |
|
|
|
|
2.
 | |
| Title | Ferroelectric-Gate Field Effect Transistor Memories : Device Physics and Applications |
| Author(s) | Park, Byung-Eun;Ishiwara, Hiroshi;Okuyama, Masanori;Sakai, Shigeki;Yoon, Sung-Min |
| Publication | Singapore, Springer Singapore, 2020. |
| Description | XIV, 425 p. 313 illus., 183 illus. in color : online resource |
| Abstract Note | This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films. |
| ISBN,Price | 9789811512124 |
| Keyword(s) | 1. CIRCUITS AND SYSTEMS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRONIC CIRCUITS
5. Electronic Circuits and Devices
6. ELECTRONICS
7. Electronics and Microelectronics, Instrumentation
8. Interfaces (Physical sciences)
9. Materials???Surfaces
10. MICROELECTRONICS
11. Surface and Interface Science, Thin Films
12. Surfaces (Physics)
13. Surfaces and Interfaces, Thin Films
14. THIN FILMS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09206 |
|
|
On Shelf |
|
|
|
| |