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Author | Title | Accn# | Year | Item Type | Claims |
| 171 |
Allan, Guy |
Heterojunctions and Semiconductor Superlattices |
I04408 |
1986 |
eBook |
|
| 172 |
Larrabee, Robert D |
Neutron Transmutation Doping of Semiconductor Materials |
I04246 |
1984 |
eBook |
|
| 173 |
Seeger, Karlheinz |
Semiconductor Physics |
I04101 |
1999 |
eBook |
|
| 174 |
Bauer, G??nther |
Optical Characterization of Epitaxial Semiconductor Layers |
I04004 |
1996 |
eBook |
|
| 175 |
B??er, Karl W |
Survey of Semiconductor Physics |
I03331 |
1992 |
eBook |
|
| 176 |
Simon, J |
Molecular Semiconductors |
I03297 |
1985 |
eBook |
|
| 177 |
Weber, Harald W |
High-Tc Superconductors |
I03287 |
1988 |
eBook |
|
| 178 |
Kubat, M |
Power Semiconductors |
I03086 |
1984 |
eBook |
|
| 179 |
Weinstock, Harold |
Superconducting Electronics |
I02781 |
1989 |
eBook |
|
| 180 |
Selberherr, S |
Analysis and Simulation of Semiconductor Devices |
I02754 |
1984 |
eBook |
|
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171.
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| Title | Heterojunctions and Semiconductor Superlattices : Proceedings of the Winter School Les Houches, France, March 12???21, 1985 |
| Author(s) | Allan, Guy;Bastard, Gerals;Boccara, Nino;Lannoo, Michel;Voos, Michel |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1986. |
| Description | VIII, 254 p. 3 illus : online resource |
| Abstract Note | The Winter School held in Les Houches on March 12-21, 1985 was devoted to Semiconductor Heterojunctions and Superlattices, a topic which is recognized as being now one of the most interesting and active fields in semiconductor physics. In fact, following the pioneering work of Esaki and Tsu in 1970, the study of these two-dimensional semiconductor heterostructures has developed rapidly, both from the point of view of basic physics and of applications. For instance, modulation-doped heterojunctions are nowadays currently used to investigate the quantum Hall effect and to make very fast transistors. This book contains the lectures presented at this Winter School, showing in particular that many aspects of semiconductor heterojunctions and super?? lattices were treated, extending from the fabrication of these two-dimensional systems to their basic properties and applications in micro-and opto-electron?? ics. Among the subjects which were covered, one can quote as examples: molecular beam epitaxy and metallorganic chemical vapor deposition of semi?? conductor compounds; band structure of superlattices; properties of elec?? trons in heterojunctions, including the fractional quantum Hall effect; opti?? cal properties of two-dimensional heterostructures; quantum well lasers; and two-dimensional electron gas field effect transistors. It is clear that two-dimensional semiconductor systems are raising a great deal of interest in many industrial and university laboratories. From the number of applications which were received and from the reactions of the participants, it can certainly be asserted that this School corresponded to a need and came at the right time |
| ISBN,Price | 9783642710100 |
| Keyword(s) | 1. CONDENSED MATTER
2. CONDENSED MATTER PHYSICS
3. EBOOK
4. EBOOK - SPRINGER
5. Electronic materials
6. MATERIALS SCIENCE
7. Materials Science, general
8. Materials???Surfaces
9. Optical and Electronic Materials
10. OPTICAL MATERIALS
11. Phase transitions (Statistical physics)
12. Phase Transitions and Multiphase Systems
13. SEMICONDUCTORS
14. Surfaces and Interfaces, Thin Films
15. THIN FILMS
|
| Item Type | eBook |
Multi-Media Links
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| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I04408 |
|
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On Shelf |
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172.
 |
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| Title | Neutron Transmutation Doping of Semiconductor Materials |
| Author(s) | Larrabee, Robert D |
| Publication | New York, NY, Springer US, 1984. |
| Description | XIV, 338 p. 100 illus : online resource |
| Abstract Note | viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza?? tion of NTD silicon, and the use of NTD silicon for device appli?? cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans?? mutation doping of nonsilicon semiconductors had begun to accel?? erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre?? sented on NTD of nonsilicon semiconductors, five papers on irra?? diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi?? cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity |
| ISBN,Price | 9781461326953 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. ELECTRICAL ENGINEERING
4. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I04246 |
|
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On Shelf |
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173.
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| Title | Semiconductor Physics : An Introduction |
| Author(s) | Seeger, Karlheinz |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1999. |
| Description | XII, 522 p. 39 illus : online resource |
| Abstract Note | Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters |
| ISBN,Price | 9783662037973 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. ELECTRONICS
5. Electronics and Microelectronics, Instrumentation
6. Materials???Surfaces
7. MICROELECTRONICS
8. Optical and Electronic Materials
9. OPTICAL MATERIALS
10. SEMICONDUCTORS
11. Surfaces and Interfaces, Thin Films
12. THIN FILMS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I04101 |
|
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On Shelf |
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174.
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| Title | Optical Characterization of Epitaxial Semiconductor Layers |
| Author(s) | Bauer, G??nther;Richter, Wolfgang |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1996. |
| Description | XVI, 429 p : online resource |
| Abstract Note | The last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on non-destructive in-situ characterization. Among those, methods which rely on the interaction of electromagnetic radiation with matter are particularly valuable. In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures (such as reflection anistropy spectroscopy, infrared reflection-absorption spectroscopy, second-harmonic generation, and others). This volume is intended for researchers working at universities or in industry, as well as for graduate students who are interested in the characterization of semiconductor layers and for those entering this field. It summarizes the present-day knowledge and reviews the latest developments important for future ex-situ and in-situ studies |
| ISBN,Price | 9783642796784 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. LASERS
5. Materials???Surfaces
6. Optical and Electronic Materials
7. OPTICAL MATERIALS
8. Optics, Lasers, Photonics, Optical Devices
9. PHOTONICS
10. SEMICONDUCTORS
11. Surfaces and Interfaces, Thin Films
12. THIN FILMS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I04004 |
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On Shelf |
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175.
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| Title | Survey of Semiconductor Physics : Volume II Barriers, Junctions, Surfaces, and Devices |
| Author(s) | B??er, Karl W |
| Publication | Dordrecht, Springer Netherlands, 1992. |
| Description | XCIV, 1442 p : online resource |
| Abstract Note | Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top?? ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge?? neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a graduate level class had to be interwoven with others written in shorter, reference style. The pointers at the right-hand page header will assist in distinguishing the more diffi?? cult reference parts of the book (with the pointer to the right) from the more easy-to-read basic educational sections (with the pointer tending to the left) |
| ISBN,Price | 9789401129121 |
| Keyword(s) | 1. CLASSICAL ELECTRODYNAMICS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRODYNAMICS
5. Electronic materials
6. MICROSCOPY
7. Optical and Electronic Materials
8. OPTICAL MATERIALS
9. OPTICS
10. SEMICONDUCTORS
11. SOLID STATE PHYSICS
12. SPECTROSCOPY
13. Spectroscopy and Microscopy
|
| Item Type | eBook |
Multi-Media Links
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Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I03331 |
|
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On Shelf |
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176.
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| Title | Molecular Semiconductors : Photoelectrical Properties and Solar Cells |
| Author(s) | Simon, J;Andre, J.-J;Lehn, J.M;Rees, C.W |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1985. |
| Description | XIV, 290 p : online resource |
| Abstract Note | During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator ?? 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds, such simplicity is certainly not the case. A huge number of molecular and macromolecular systems have been described which possess an intermediate conductivity. However, the various attempts which have been made to rationalize their properties have, more often than not, failed. Even very basic electrical properties such as the mechanism of the charge carrier formation or the nature and the density ofthe dopants are not known in detail. The study of molecular semiconductor junctions is very probably the most powerful approach to shed light on these problems |
| ISBN,Price | 9783642700125 |
| Keyword(s) | 1. CONDENSED MATTER
2. CONDENSED MATTER PHYSICS
3. EBOOK
4. EBOOK - SPRINGER
5. Electronic materials
6. Optical and Electronic Materials
7. OPTICAL MATERIALS
8. PHYSICAL CHEMISTRY
9. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I03297 |
|
|
On Shelf |
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177.
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| Title | High-Tc Superconductors |
| Author(s) | Weber, Harald W |
| Publication | New York, NY, Springer US, 1988. |
| Description | XII, 364 p. 55 illus : online resource |
| Abstract Note | In the past two years conferences on superconductivity have been characterized by the attendance of hundreds of scientists. Consequently, the organizers were forced to schedule numerous parallel sessions and poster presentations with an almost unsurveyable amount of information. It was, therefore, felt that a more informal get-together, providing ample time for a thourough discussion of some topics of current interest in high-temperature superconductivity, was timely and benefitial for leading scientists as well as for newcomers in the field. The present volume contains the majority of papers presented at the International Discussion Meeting on High-Tc Superconductors held at the Mauterndorf Castle in the Austrian Alps from February 7 to 11, 1988. Each subject was introduced in review form by a few invited speakers and then discussed together with the contributed poster presentations. These discussion sessions chaired by selected scientists turned out to be the highlights of the meeting, not only because all the participants truly appreciated the possibility of an information exchange, but mainly because of the magnificent job done by the discussion chairmen, John A. Mydosh (Leiden), Martin Peter (Geneva) and Ken E. Gray (Argonne). First results on the just discovered Bi-superconductors and the clarification of electron resonance experiments on (123)-compounds should be mentioned in particular. The relaxed atomosphere favoring free discussions was certainly promoted by the surroundings offered in the Mauterndorf Castle, which dates back to 1253. Poster presentations and a conference banquet in historic knight's halls are certainly not found everyday in conference routines |
| ISBN,Price | 9781489908469 |
| Keyword(s) | 1. CLASSICAL ELECTRODYNAMICS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRODYNAMICS
5. Electronic materials
6. ENGINEERING
7. Engineering, general
8. Optical and Electronic Materials
9. OPTICAL MATERIALS
10. OPTICS
11. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I03287 |
|
|
On Shelf |
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178.
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| Title | Power Semiconductors |
| Author(s) | Kubat, M |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1984. |
| Description | XXV, 507 p. 57 illus : online resource |
| Abstract Note | The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor?? metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four?? layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components |
| ISBN,Price | 9783662024188 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. Materials???Surfaces
5. Optical and Electronic Materials
6. OPTICAL MATERIALS
7. SEMICONDUCTORS
8. Surfaces and Interfaces, Thin Films
9. THIN FILMS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I03086 |
|
|
On Shelf |
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179.
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| Title | Superconducting Electronics |
| Author(s) | Weinstock, Harold;Nisenoff, Martin |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1989. |
| Description | XII, 441 p : online resource |
| Abstract Note | The genesis of the NATO Advanced Study Institute (ASI) upon which this volume is based, occurred during the summer of 1986 when we came to the realization that there had been significant progress during the early 1980's in the field of superconducting electronics and in applications of this technology. Despite this progress, there was a perception among many engineers and scientists that, with the possible exception of a limited number of esoteric fundamental studies and applications (e.g., the Josephson voltage standard or the SQUID magnetometer), there was no significant future for electronic systems incorporating superconducting elements. One of the major reasons for this perception was the aversion to handling liquid helium or including a closed-cycle helium liquefier. In addition, many critics felt that IBM's cancellation of its superconducting computer project in 1983 was "proof" that superconductors could not possibly compete with semiconductors in high-speed signal processing. From our perspective, the need for liquid helium was outweighed by improved performance, i. e., higher speed, lower noise, greater sensitivity and much lower power dissipation. For many commercial, medical, scientific and military applications, these attributes can lead to either enhanced capability (e.g., compact real-time signal processing) or measurements that cannot be made using any other technology (e.g., SQUID magnetometry to detect neuromagnetic activity) |
| ISBN,Price | 9783642838859 |
| Keyword(s) | 1. COMPLEXITY
2. COMPUTATIONAL COMPLEXITY
3. EBOOK
4. EBOOK - SPRINGER
5. ELECTRONICS
6. Electronics and Microelectronics, Instrumentation
7. MICROELECTRONICS
8. SEMICONDUCTORS
9. Special Purpose and Application-Based Systems
10. Special purpose computers
11. Strongly Correlated Systems, Superconductivity
12. SUPERCONDUCTIVITY
13. SUPERCONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
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Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I02781 |
|
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On Shelf |
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180.
| |
| Title | Analysis and Simulation of Semiconductor Devices |
| Author(s) | Selberherr, S |
| Publication | Vienna, Springer Vienna, 1984. |
| Description | XIV, 296 p : online resource |
| Abstract Note | The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices |
| ISBN,Price | 9783709187524 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. Optical and Electronic Materials
5. OPTICAL MATERIALS
6. SEMICONDUCTORS
7. SOFTWARE ENGINEERING
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I02754 |
|
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On Shelf |
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