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Author | Title | Accn# | Year | Item Type | Claims |
| 191 |
Bauer, G??nther |
Optical Characterization of Epitaxial Semiconductor Layers |
I04004 |
1996 |
eBook |
|
| 192 |
B??er, Karl W |
Survey of Semiconductor Physics |
I03331 |
1992 |
eBook |
|
| 193 |
Simon, J |
Molecular Semiconductors |
I03297 |
1985 |
eBook |
|
| 194 |
Weber, Harald W |
High-Tc Superconductors |
I03287 |
1988 |
eBook |
|
| 195 |
Kubat, M |
Power Semiconductors |
I03086 |
1984 |
eBook |
|
| 196 |
Weinstock, Harold |
Superconducting Electronics |
I02781 |
1989 |
eBook |
|
| 197 |
Selberherr, S |
Analysis and Simulation of Semiconductor Devices |
I02754 |
1984 |
eBook |
|
| 198 |
Meese, J |
Neutron Transmutation Doping in Semiconductors |
I02520 |
1979 |
eBook |
|
| 199 |
Ruge, Ingolf |
Ion Implantation in Semiconductors |
I02359 |
1971 |
eBook |
|
| 200 |
Mark Geoghegan |
Polymer electronics |
OB1481 |
2013 |
eBook |
|
|
|
191.
  |
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| Title | Optical Characterization of Epitaxial Semiconductor Layers |
| Author(s) | Bauer, G??nther;Richter, Wolfgang |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1996. |
| Description | XVI, 429 p : online resource |
| Abstract Note | The last decade has witnessed an explosive development in the growth of expitaxial layers and structures with atomic-scale dimensions. This progress has created new demands for the characterization of those stuctures. Various methods have been refined and new ones developed with the main emphasis on non-destructive in-situ characterization. Among those, methods which rely on the interaction of electromagnetic radiation with matter are particularly valuable. In this book standard methods such as far-infrared spectroscopy, ellipsometry, Raman scattering, and high-resolution X-ray diffraction are presented, as well as new advanced techniques which provide the potential for better in-situ characterization of epitaxial structures (such as reflection anistropy spectroscopy, infrared reflection-absorption spectroscopy, second-harmonic generation, and others). This volume is intended for researchers working at universities or in industry, as well as for graduate students who are interested in the characterization of semiconductor layers and for those entering this field. It summarizes the present-day knowledge and reviews the latest developments important for future ex-situ and in-situ studies |
| ISBN,Price | 9783642796784 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. LASERS
5. Materials???Surfaces
6. Optical and Electronic Materials
7. OPTICAL MATERIALS
8. Optics, Lasers, Photonics, Optical Devices
9. PHOTONICS
10. SEMICONDUCTORS
11. Surfaces and Interfaces, Thin Films
12. THIN FILMS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I04004 |
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On Shelf |
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192.
 |
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| Title | Survey of Semiconductor Physics : Volume II Barriers, Junctions, Surfaces, and Devices |
| Author(s) | B??er, Karl W |
| Publication | Dordrecht, Springer Netherlands, 1992. |
| Description | XCIV, 1442 p : online resource |
| Abstract Note | Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top?? ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge?? neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a graduate level class had to be interwoven with others written in shorter, reference style. The pointers at the right-hand page header will assist in distinguishing the more diffi?? cult reference parts of the book (with the pointer to the right) from the more easy-to-read basic educational sections (with the pointer tending to the left) |
| ISBN,Price | 9789401129121 |
| Keyword(s) | 1. CLASSICAL ELECTRODYNAMICS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRODYNAMICS
5. Electronic materials
6. MICROSCOPY
7. Optical and Electronic Materials
8. OPTICAL MATERIALS
9. OPTICS
10. SEMICONDUCTORS
11. SOLID STATE PHYSICS
12. SPECTROSCOPY
13. Spectroscopy and Microscopy
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I03331 |
|
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On Shelf |
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193.
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| Title | Molecular Semiconductors : Photoelectrical Properties and Solar Cells |
| Author(s) | Simon, J;Andre, J.-J;Lehn, J.M;Rees, C.W |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1985. |
| Description | XIV, 290 p : online resource |
| Abstract Note | During the past thirty years considerable efforts have been made to design the synthesis and the study of molecular semiconductors. Molecular semiconductors - and more generally molecular materials - involve interactions between individual subunits which can be separately synthesized. Organic and metallo-organic derivatives are the basis of most of the molecular materials. A survey of the literature on molecular semiconductors leaves one rather confused. It does seem to be very difficult to correlate the molecular structure of these semiconductors with their experimental electrical properties. For inorganic materials a simple definition delimits a fairly homogeneous family. If an inorganic material has a conductivity intermediate between that of an 12 1 1 3 1 1 insulator ?? 10- n- cm- ) and that of a metal (> 10 n- cm- ), then it is a semiconductor and will exhibit the characteristic properties of this family, such as junction formation, photoconductivity, and the photovoltaic effect. For molecular compounds, such simplicity is certainly not the case. A huge number of molecular and macromolecular systems have been described which possess an intermediate conductivity. However, the various attempts which have been made to rationalize their properties have, more often than not, failed. Even very basic electrical properties such as the mechanism of the charge carrier formation or the nature and the density ofthe dopants are not known in detail. The study of molecular semiconductor junctions is very probably the most powerful approach to shed light on these problems |
| ISBN,Price | 9783642700125 |
| Keyword(s) | 1. CONDENSED MATTER
2. CONDENSED MATTER PHYSICS
3. EBOOK
4. EBOOK - SPRINGER
5. Electronic materials
6. Optical and Electronic Materials
7. OPTICAL MATERIALS
8. PHYSICAL CHEMISTRY
9. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I03297 |
|
|
On Shelf |
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194.
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|
| Title | High-Tc Superconductors |
| Author(s) | Weber, Harald W |
| Publication | New York, NY, Springer US, 1988. |
| Description | XII, 364 p. 55 illus : online resource |
| Abstract Note | In the past two years conferences on superconductivity have been characterized by the attendance of hundreds of scientists. Consequently, the organizers were forced to schedule numerous parallel sessions and poster presentations with an almost unsurveyable amount of information. It was, therefore, felt that a more informal get-together, providing ample time for a thourough discussion of some topics of current interest in high-temperature superconductivity, was timely and benefitial for leading scientists as well as for newcomers in the field. The present volume contains the majority of papers presented at the International Discussion Meeting on High-Tc Superconductors held at the Mauterndorf Castle in the Austrian Alps from February 7 to 11, 1988. Each subject was introduced in review form by a few invited speakers and then discussed together with the contributed poster presentations. These discussion sessions chaired by selected scientists turned out to be the highlights of the meeting, not only because all the participants truly appreciated the possibility of an information exchange, but mainly because of the magnificent job done by the discussion chairmen, John A. Mydosh (Leiden), Martin Peter (Geneva) and Ken E. Gray (Argonne). First results on the just discovered Bi-superconductors and the clarification of electron resonance experiments on (123)-compounds should be mentioned in particular. The relaxed atomosphere favoring free discussions was certainly promoted by the surroundings offered in the Mauterndorf Castle, which dates back to 1253. Poster presentations and a conference banquet in historic knight's halls are certainly not found everyday in conference routines |
| ISBN,Price | 9781489908469 |
| Keyword(s) | 1. CLASSICAL ELECTRODYNAMICS
2. EBOOK
3. EBOOK - SPRINGER
4. ELECTRODYNAMICS
5. Electronic materials
6. ENGINEERING
7. Engineering, general
8. Optical and Electronic Materials
9. OPTICAL MATERIALS
10. OPTICS
11. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I03287 |
|
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On Shelf |
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195.
|
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| Title | Power Semiconductors |
| Author(s) | Kubat, M |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1984. |
| Description | XXV, 507 p. 57 illus : online resource |
| Abstract Note | The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor?? metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four?? layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components |
| ISBN,Price | 9783662024188 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. Materials???Surfaces
5. Optical and Electronic Materials
6. OPTICAL MATERIALS
7. SEMICONDUCTORS
8. Surfaces and Interfaces, Thin Films
9. THIN FILMS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I03086 |
|
|
On Shelf |
|
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196.
|
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| Title | Superconducting Electronics |
| Author(s) | Weinstock, Harold;Nisenoff, Martin |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1989. |
| Description | XII, 441 p : online resource |
| Abstract Note | The genesis of the NATO Advanced Study Institute (ASI) upon which this volume is based, occurred during the summer of 1986 when we came to the realization that there had been significant progress during the early 1980's in the field of superconducting electronics and in applications of this technology. Despite this progress, there was a perception among many engineers and scientists that, with the possible exception of a limited number of esoteric fundamental studies and applications (e.g., the Josephson voltage standard or the SQUID magnetometer), there was no significant future for electronic systems incorporating superconducting elements. One of the major reasons for this perception was the aversion to handling liquid helium or including a closed-cycle helium liquefier. In addition, many critics felt that IBM's cancellation of its superconducting computer project in 1983 was "proof" that superconductors could not possibly compete with semiconductors in high-speed signal processing. From our perspective, the need for liquid helium was outweighed by improved performance, i. e., higher speed, lower noise, greater sensitivity and much lower power dissipation. For many commercial, medical, scientific and military applications, these attributes can lead to either enhanced capability (e.g., compact real-time signal processing) or measurements that cannot be made using any other technology (e.g., SQUID magnetometry to detect neuromagnetic activity) |
| ISBN,Price | 9783642838859 |
| Keyword(s) | 1. COMPLEXITY
2. COMPUTATIONAL COMPLEXITY
3. EBOOK
4. EBOOK - SPRINGER
5. ELECTRONICS
6. Electronics and Microelectronics, Instrumentation
7. MICROELECTRONICS
8. SEMICONDUCTORS
9. Special Purpose and Application-Based Systems
10. Special purpose computers
11. Strongly Correlated Systems, Superconductivity
12. SUPERCONDUCTIVITY
13. SUPERCONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I02781 |
|
|
On Shelf |
|
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197.
|
|
| Title | Analysis and Simulation of Semiconductor Devices |
| Author(s) | Selberherr, S |
| Publication | Vienna, Springer Vienna, 1984. |
| Description | XIV, 296 p : online resource |
| Abstract Note | The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices |
| ISBN,Price | 9783709187524 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. Optical and Electronic Materials
5. OPTICAL MATERIALS
6. SEMICONDUCTORS
7. SOFTWARE ENGINEERING
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I02754 |
|
|
On Shelf |
|
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198.
|
|
| Title | Neutron Transmutation Doping in Semiconductors |
| Author(s) | Meese, J |
| Publication | New York, NY, Springer US, 1979. |
| Description | X, 372 p : online resource |
| Abstract Note | This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con?? ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna?? tional in scope |
| ISBN,Price | 9781468482492 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. ELECTRICAL ENGINEERING
4. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I02520 |
|
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On Shelf |
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199.
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| Title | Ion Implantation in Semiconductors : Proceedings of the II. International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects May 24???28, 1971, Garmisch-Partenkirchen, Bavaria, Germany |
| Author(s) | Ruge, Ingolf;Graul, J |
| Publication | Berlin, Heidelberg, Springer Berlin Heidelberg, 1971. |
| Description | XIV, 508 p : online resource |
| Abstract Note | In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos?? sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power?? ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori?? ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers |
| ISBN,Price | 9783642806605 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. MEDICINE
4. Medicine/Public Health, general
5. SEMICONDUCTORS
|
| Item Type | eBook |
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| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I02359 |
|
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On Shelf |
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200.
| |
| Title | Polymer electronics |
| Author(s) | Mark Geoghegan;Georges Hadziioannou |
| Publication | Oxford University Press 2013. |
| Abstract Note | Polymer or plastic electronics offers the promise of a new kind of semiconductor industry; one where materials are easily processed and devices are cheap and, in some cases, even flexible. Polymers can be used in transistor circuitry (chips), sensors, RFID tags, electrochromic windows, and optoelectronic devices such as those used in lighting or photovoltaic (solar) cells. This book presents a coherent introduction to polymer electronics, and in particular the underlying physics of polymer devices. Differences with conventional (silicon-based) electronics are highlighted, so that the main concepts can be treated clearly. Polyacetylene, the archetypal semiconducting polymer, is used to begin the discussion, but other important classes of polymer are also introduced. The interaction of polymers with light, and charge transport are treated carefully in separate chapters. Semiconducting polymers is an interdisciplinary field in which physicists and chemists work together, so a chapter on the synthesis of different kinds of polymer is included. As well as chemistry, the important physics of polymers is also covered, as is the importance of surfaces, because most devices are, after all, thin films. The book concludes with the physics encompassing the most important devices: transistors, light-emitting diodes, and photovolatic cells. |
| ISBN,Price | Rs 0.00 |
| Keyword(s) | 1. EBOOK
2. EBOOK - OXFORD UNIVERSITY PRESS
3. ELECTRONICS
4. POLYMERS
5. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
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| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| OB1481 |
|
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On Shelf |
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