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Author | Title | Accn# | Year | Item Type | Claims |
| 51 |
Schmeckebier, Holger |
Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication |
I09783 |
2017 |
eBook |
|
| 52 |
Cabrera, Mario |
Development of 15 Micron Cutoff Wavelength HgCdTe Detector Arrays for Astronomy |
I09721 |
2020 |
eBook |
|
| 53 |
Murmann, Boris |
NANO-CHIPS 2030 |
I09717 |
2020 |
eBook |
|
| 54 |
Parinov, Ivan A |
Advanced Materials |
I09688 |
2018 |
eBook |
|
| 55 |
Hamaguchi, Chihiro |
Basic Semiconductor Physics |
I09666 |
2017 |
eBook |
|
| 56 |
Jumpertz, Louise |
Nonlinear Photonics in Mid-infrared Quantum Cascade Lasers |
I09652 |
2017 |
eBook |
|
| 57 |
Ghatak, Kamakhya Prasad |
Dispersion Relations in Heavily-Doped Nanostructures |
I09634 |
2016 |
eBook |
|
| 58 |
Rabus, Dominik Gerhard |
Integrated Ring Resonators |
I09618 |
2020 |
eBook |
|
| 59 |
Lu, Wei |
Spectroscopy of Semiconductors |
I09553 |
2018 |
eBook |
|
| 60 |
de la Barrera, Sergio C |
Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics |
I09540 |
2017 |
eBook |
|
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51.
  |
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| Title | Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication |
| Author(s) | Schmeckebier, Holger |
| Publication | Cham, Springer International Publishing, 2017. |
| Description | XXIII, 190 p. 109 illus., 59 illus. in color : online resource |
| Abstract Note | This thesis examines the unique properties of gallium arsenide (GaAs)-based quantum-dot semiconductor optical amplifiers for optical communication networks, introducing readers to their fundamentals, basic parameters and manifold applications. The static and dynamic properties of these amplifiers are discussed extensively in comparison to conventional, non quantum-dot based amplifiers, and their unique advantages are elaborated on, such as the fast carrier dynamics and the decoupling of gain and phase dynamics. In addition to diverse amplification scenarios involving single and multiple high symbol rate amplitude and phase-coded data signals, wide-range wavelength conversion as a key functionality for optical signal processing is investigated and discussed in detail. Furthermore, two novel device concepts are developed and demonstrated that have the potential to significantly simplify network architectures, reducing the investment and maintenance costs as well as the energy consumption of future networks. |
| ISBN,Price | 9783319442754 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. IMAGE PROCESSING
4. LASERS
5. Optics, Lasers, Photonics, Optical Devices
6. PHOTONICS
7. SEMICONDUCTORS
8. SIGNAL PROCESSING
9. Signal, Image and Speech Processing
10. Speech processing systems
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09783 |
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On Shelf |
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52.
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| Title | Development of 15 Micron Cutoff Wavelength HgCdTe Detector Arrays for Astronomy |
| Author(s) | Cabrera, Mario |
| Publication | Cham, Springer International Publishing, 2020. |
| Description | XVII, 121 p. 71 illus., 44 illus. in color : online resource |
| Abstract Note | This thesis describes advances in the understanding of HgCdTe detectors. While long wave (15 ??m) infrared detectors HgCdTe detectors have been developed for military use under high background irradiance, these arrays had not previously been developed for astronomical use where the background irradiance is a billion times smaller. The main pitfall in developing such arrays for astronomy is the pixel dark current which plagues long wave HgCdTe. The author details work on the success of shorter wavelength development at Teledyne Imaging Sensors, carefully modeling the dark current???reverse bias voltage curves of their 10 ??m devices at a temperature of 30K, as well as the dark current???temperature curves at several reverse biases, including 250 mV. By projecting first to 13 and then 15 ??m HgCdTe growth, values of fundamental properties of the material that would minimize tunneling dark currents were determined through careful modeling of the dark current-reverse bias voltage curves, as well as the dark current-temperature curves. This analysis was borne out in the 13 ??m parts produced by Teledyne, and then further honed to produce the necessary parameters for the 15 ??m growth. The resulting 13 ??m arrays are being considered by a number of ground-based astronomy research groups |
| ISBN,Price | 9783030542412 |
| Keyword(s) | 1. Astronomy, Observations and Techniques
2. Astronomy???Observations
3. EBOOK
4. EBOOK - SPRINGER
5. MATERIALS SCIENCE
6. Materials Science, general
7. Measurement Science and Instrumentation
8. Measurement??????
9. Observations, Astronomical
10. PHYSICAL MEASUREMENTS
11. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09721 |
|
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On Shelf |
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53.
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| Title | NANO-CHIPS 2030 : On-Chip AI for an Efficient Data-Driven World |
| Author(s) | Murmann, Boris;Hoefflinger, Bernd |
| Publication | Cham, Springer International Publishing, 2020. |
| Description | XXIII, 592 p. 374 illus., 296 illus. in color : online resource |
| Abstract Note | In this book, a global team of experts from academia, research institutes and industry presents their vision on how new nano-chip architectures will enable the performance and energy efficiency needed for AI-driven advancements in autonomous mobility, healthcare, and man-machine cooperation. Recent reviews of the status quo, as presented in CHIPS 2020 (Springer), have prompted the need for an urgent reassessment of opportunities in nanoelectronic information technology. As such, this book explores the foundations of a new era in nanoelectronics that will drive progress in intelligent chip systems for energy-efficient information technology, on-chip deep learning for data analytics, and quantum computing. Given its scope, this book provides a timely compendium that hopes to inspire and shape the future of nanoelectronics in the decades to come. |
| ISBN,Price | 9783030183387 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. ECONOMIC POLICY
4. ELECTRONICS
5. Electronics and Microelectronics, Instrumentation
6. MICROELECTRONICS
7. Nanoscale science
8. Nanoscale Science and Technology
9. NANOSCIENCE
10. Nanostructures
11. NANOTECHNOLOGY
12. R & D/Technology Policy
13. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09717 |
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On Shelf |
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54.
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| Title | Advanced Materials : Proceedings of the International Conference on ???Physics and Mechanics of New Materials and Their Applications???, PHENMA 2017 |
| Author(s) | Parinov, Ivan A;Chang, Shun-Hsyung;Gupta, Vijay K |
| Publication | Cham, Springer International Publishing, 2018. |
| Description | XXV, 640 p. 285 illus., 184 illus. in color : online resource |
| Abstract Note | This book presents selected peer-reviewed contributions from the 2017 International Conference on ???Physics and Mechanics of New Materials and Their Applications???, PHENMA 2017 (Jabalpur, India, 14???16 October, 2017), which is devoted to processing techniques, physics, mechanics, and applications of advanced materials. The book focuses on a wide spectrum of nanostructures, ferroelectric crystals, materials and composites as well as promising materials with special properties. It presents nanotechnology approaches, modern environmentally friendly piezoelectric and ferromagnetic techniques and physical and mechanical studies of the structural and physical???mechanical properties of materials. Various original mathematical and numerical methods are applied to the solution of different technological, mechanical and physical problems that are interesting from theoretical, modeling and experimental points of view. Further, the book highlights novel devices with high accuracy, longevity and extended capabilities to operate under wide temperature and pressure ranges and aggressive media, which show improved characteristics, thanks to the developed materials and composites, opening new possibilities for different physico-mechanical processes and phenomena |
| ISBN,Price | 9783319789194 |
| Keyword(s) | 1. CLASSICAL MECHANICS
2. EBOOK
3. EBOOK - SPRINGER
4. Electrochemistry
5. MECHANICS
6. Mechanics, Applied
7. SEMICONDUCTORS
8. Solid Mechanics
9. Structural Materials
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09688 |
|
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On Shelf |
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55.
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| Title | Basic Semiconductor Physics |
| Author(s) | Hamaguchi, Chihiro |
| Publication | Cham, Springer International Publishing, 2017. |
| Description | XXI, 709 p. 315 illus : online resource |
| Abstract Note | This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Nitrides such as GaN, InN, AlN and their ternary alloys are very important materials for the blue light emission, and high power devic es with and high frequency. |
| ISBN,Price | 9783319668604 |
| Keyword(s) | 1. Characterization and Evaluation of Materials
2. EBOOK
3. EBOOK - SPRINGER
4. Electronic materials
5. ELECTRONICS
6. Electronics and Microelectronics, Instrumentation
7. MATERIALS SCIENCE
8. MICROELECTRONICS
9. Optical and Electronic Materials
10. OPTICAL MATERIALS
11. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09666 |
|
|
On Shelf |
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56.
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| Title | Nonlinear Photonics in Mid-infrared Quantum Cascade Lasers |
| Author(s) | Jumpertz, Louise |
| Publication | Cham, Springer International Publishing, 2017. |
| Description | XXIII, 134 p. 100 illus., 6 illus. in color : online resource |
| Abstract Note | This thesis presents the first comprehensive analysis of quantum cascade laser nonlinear dynamics and includes the first observation of a temporal chaotic behavior in quantum cascade lasers. It also provides the first analysis of optical instabilities in the mid-infrared range. Mid-infrared quantum cascade lasers are unipolar semiconductor lasers, which have become widely used in applications such as gas spectroscopy, free-space communications or optical countermeasures. Applying external perturbations such as optical feedback or optical injection leads to a strong modification of the quantum cascade laser properties. Optical feedback impacts the static properties of mid-infrared Fabry???Perot and distributed feedback quantum cascade lasers, inducing power increase; threshold reduction; modification of the optical spectrum, which can become either single- or multimode; and enhanced beam quality in broad-area transverse multimode lasers. It also leads to a different dynamical behavior, and a quantum cascade laser subject to optical feedback can oscillate periodically or even become chaotic.?? A quantum cascade laser under external control could therefore be a source with enhanced properties for the usual mid-infrared applications, but could also address new applications such as tunable photonic oscillators, extreme events generators, chaotic Light Detection and Ranging (LIDAR), chaos-based secured communications or unpredictable countermeasures |
| ISBN,Price | 9783319658797 |
| Keyword(s) | 1. Applications of Nonlinear Dynamics and Chaos Theory
2. EBOOK
3. EBOOK - SPRINGER
4. LASERS
5. Optics, Lasers, Photonics, Optical Devices
6. PHOTONICS
7. SEMICONDUCTORS
8. STATISTICAL PHYSICS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09652 |
|
|
On Shelf |
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57.
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| Title | Dispersion Relations in Heavily-Doped Nanostructures |
| Author(s) | Ghatak, Kamakhya Prasad |
| Publication | Cham, Springer International Publishing, 2016. |
| Description | LV, 625 p. 31 illus : online resource |
| Abstract Note | This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers |
| ISBN,Price | 9783319210001 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. MICROWAVES
4. Microwaves, RF and Optical Engineering
5. Nanoscale science
6. Nanoscale Science and Technology
7. NANOSCIENCE
8. Nanostructures
9. NANOTECHNOLOGY
10. OPTICAL ENGINEERING
11. SEMICONDUCTORS
12. SOLID STATE PHYSICS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09634 |
|
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On Shelf |
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58.
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| Title | Integrated Ring Resonators : A Compendium |
| Author(s) | Rabus, Dominik Gerhard;Sada, Cinzia |
| Publication | Cham, Springer International Publishing, 2020. |
| Description | XVII, 360 p. 329 illus., 66 illus. in color : online resource |
| Abstract Note | This book describes the current state of the art in integrated ring resonators, covering more than two decades in the development of this exciting device. It discusses in depth one of the most fascinating and versatile integrated optical filters, providing readers with a panoramic view spanning from design and simulation to implementation in various material systems. Written by authors with extensive experience in both academia and industry, this second edition offers a much-needed, major update as interest in integrated ring resonators undergoes a global revival. The new edition includes a comprehensive technological update, and a timely discussion of recent advances in new application areas, such as optofluidics and microfluidics, telecom operations and biosensors. This aptly named compendium is the ideal guide for researchers and engineers looking to review the field as a whole while exploring several of its possible and exciting future trajectories. |
| ISBN,Price | 9783030601317 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. ELECTRICAL ENGINEERING
4. Electronic materials
5. LASERS
6. Optical and Electronic Materials
7. OPTICAL MATERIALS
8. Optics, Lasers, Photonics, Optical Devices
9. PHOTONICS
10. SEMICONDUCTORS
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09618 |
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On Shelf |
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59.
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| Title | Spectroscopy of Semiconductors : Numerical Analysis Bridging Quantum Mechanics and Experiments |
| Author(s) | Lu, Wei;Fu, Ying |
| Publication | Cham, Springer International Publishing, 2018. |
| Description | X, 240 p. 120 illus., 76 illus. in color : online resource |
| Abstract Note | The science and technology related to semiconductors have received significant attention for applications in various fields including microelectronics, nanophotonics, and biotechnologies. Understanding of semiconductors has advanced to such a level that we are now able to design novel system complexes before we go for the proof-of-principle experimental demonstration. This book explains the experimental setups for optical spectral analysis of semiconductors and describes the experimental methods and the basic quantum mechanical principles underlying the fast-developing nanotechnology for semiconductors. Further, it uses numerous case studies with detailed theoretical discussions and calculations to demonstrate the data analysis. Covering structures ranging from bulk to the nanoscale, it examines applications in the semiconductor industry and biomedicine. Starting from the most basic physics of geometric optics, wave optics, quantum mechanics, solid-state physics, it provides a self-contained resource on the subject for university undergraduates. The book can be further used as a toolbox for researching and developing semiconductor nanotechnology based on spectroscopy |
| ISBN,Price | 9783319949536 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Electronic materials
4. LASERS
5. MICROSCOPY
6. MICROWAVES
7. Microwaves, RF and Optical Engineering
8. Optical and Electronic Materials
9. OPTICAL ENGINEERING
10. OPTICAL MATERIALS
11. Optics, Lasers, Photonics, Optical Devices
12. PHOTONICS
13. SEMICONDUCTORS
14. SPECTROSCOPY
15. Spectroscopy and Microscopy
|
| Item Type | eBook |
Multi-Media Links
Please Click here for eBook
Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09553 |
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On Shelf |
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60.
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| Title | Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics |
| Author(s) | de la Barrera, Sergio C |
| Publication | Cham, Springer International Publishing, 2017. |
| Description | XVII, 141 p. 55 illus., 48 illus. in color : online resource |
| Abstract Note | This thesis demonstrates that layered heterostructures of two-dimensional crystals graphene,??hexagonal boron nitride, and transition metal dichalcogenides provide new and interesting??interlayer transport phenomena. Low-energy electron microscopy is employed??to study the surface of atomically thin WSe2 prepared by metal-organic chemical??vapor deposition on epitaxial graphene substrates, and a method for unambiguously??measuring the number of atomic layers is presented. Using very low-energy electrons to probe the surface of similar heterostructures, a relationship between extracted??work function differences from the layers and the nature of the electrical contact between??them is revealed. An extension of this analysis is applied to surface studies??of MoSe2 prepared by molecular beam epitaxy on epitaxial graphene. A large work??function difference is measured between the MoSe2 and graphene, and a model is??provided which suggests that this observation results from an exceptional defect density??in the MoSe2 film. The thesis expounds a theory for computing tunneling currents between??two-dimensional crystals separated by a thin insulating barrier; a few situations??resulting in resonant tunneling and negative differential resistance are illustrated by??computed examples, as well as observed characteristics, for monolayer and bilayer??graphene tunneling junctions and transistors |
| ISBN,Price | 9783319692579 |
| Keyword(s) | 1. EBOOK
2. EBOOK - SPRINGER
3. Interfaces (Physical sciences)
4. MICROSCOPY
5. Nanoscale science
6. Nanoscale Science and Technology
7. NANOSCIENCE
8. Nanostructures
9. SEMICONDUCTORS
10. SPECTROSCOPY
11. Spectroscopy and Microscopy
12. Surface and Interface Science, Thin Films
13. Surfaces (Physics)
14. THIN FILMS
|
| Item Type | eBook |
Multi-Media Links
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Circulation Data
| Accession# | |
Call# | Status | Issued To | Return Due On | Physical Location |
| I09540 |
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On Shelf |
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