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531 Ferry, David K Quantum Transport in Semiconductors I00715 1992 eBook  
532 Farrow, Robin F.C Magnetism and Structure in Systems of Reduced Dimension I00705 1993 eBook  
533 Givargizov, E.I Oriented Crystallization on Amorphous Substrates I00703 1991 eBook  
534 Madelung, Otfried Semiconductors I00696 1991 eBook  
535 Ferbel, Thomas Techniques and Concepts of High-Energy Physics VI I00680 1991 eBook  
536 Abram, R.A Band Structure Engineering in Semiconductor Microstructures I00659 1989 eBook  
537 McGill, T.C Growth and Optical Properties of Wide-Gap II???VI Low-Dimensional Semiconductors I00604 1989 eBook  
538 Turek, Ilja Electronic Structure of Disordered Alloys, Surfaces and Interfaces I00572 1997 eBook  
539 Ferry, David K Physics of Submicron Devices I00537 1991 eBook  
540 Ferbel, Thomas Techniques and Concepts of High-Energy Physics VII I00475 1994 eBook  
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531.    
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TitleQuantum Transport in Semiconductors
Author(s)Ferry, David K;Jacoboni, Carlo
PublicationNew York, NY, Springer US, 1992.
DescriptionXXI, 292 p. 23 illus : online resource
Abstract NoteThe majority of the chapters in this volume represent a series of lectures. that were given at a workshop on quantum transport in ultrasmall electron devices, held at San Miniato, Italy, in March 1987. These have, of course, been extended and updated during the period that has elapsed since the workshop was held, and have been supplemented with additional chapters devoted to the tunneling process in semiconductor quantum-well structures. The aim of this work is to review and present the current understanding in nonequilibrium quantum transport appropriate to semiconductors. Gen?? erally, the field of interest can be categorized as that appropriate to inhomogeneous transport in strong applied fields. These fields are most likely to be strongly varying in both space and time. Most of the literature on quantum transport in semiconductors (or in metallic systems, for that matter) is restricted to the equilibrium approach, in which spectral densities are maintained as semiclassical energy?? conserving delta functions, or perhaps incorporating some form of collision broadening through a Lorentzian shape, and the distribution functions are kept in the equilibrium Fermi-Dirac form. The most familiar field of nonequilibrium transport, at least for the semiconductor world, is that of hot carriers in semiconductors
ISBN,Price9781489923592
Keyword(s)1. CONDENSED MATTER 2. CONDENSED MATTER PHYSICS 3. CRYSTALLOGRAPHY 4. Crystallography and Scattering Methods 5. EBOOK 6. EBOOK - SPRINGER 7. ELECTRICAL ENGINEERING 8. Electronic materials 9. MICROSCOPY 10. Optical and Electronic Materials 11. OPTICAL MATERIALS 12. SOLID STATE PHYSICS 13. SPECTROSCOPY 14. Spectroscopy and Microscopy
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I00715     On Shelf    

532.     
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TitleMagnetism and Structure in Systems of Reduced Dimension
Author(s)Farrow, Robin F.C;Dieny, Bernard;Donath, Markus;Fert, Albert;Hermsmeier, B.D
PublicationNew York, NY, Springer US, 1993.
DescriptionXII, 509 p : online resource
Abstract NoteThis volume contains the papers presented at the NATO Advanced Research Workshop on "Magnetism and Structure in Systems of Reduced Dimension", held at l'Institut d'Etudes Scientifiques de Cargese - U.M.S. - C.N.R.S. - Universite de Corte?? Universite de Nice Sophia - Antipolis during June 15-19, 1992. The ordering of papers in the volume reflects the sequence of papers presented at the workshop. The aim was not to segregate the papers into rigidly defmed areas but to group the papers into small clusters, each cluster having a common theme. In this way the parallel, rather than serial, development of areas such as preparation of films, magnetic and structural characterization was highlighted. Indeed the success of the field depends on such parallel development and is assisted by workshops of this nature and the international collaborations which they foster. The organizers and participants of the NATO workshop express their thanks to Mme. Marie-France Hanseier and the staff at l'Institut d'Etudes Scientifiques de Cargese?? U.M.S. - C.N.R.S. - Universite de Corte - Universite de Nice Sophia - Antipolis for making the workshop and local arrangements a memorable success. Warm thanks are also expressed to Varadachari Sadagopan and Pascal Stefanou for their encouragement and help in making the workshop a reality. We are also grateful to Kristl Hathaway, Larry Cooper and Gary Prinz for advice in developing the workshop program
ISBN,Price9781489915191
Keyword(s)1. CONDENSED MATTER 2. CONDENSED MATTER PHYSICS 3. CRYSTALLOGRAPHY 4. Crystallography and Scattering Methods 5. EBOOK 6. EBOOK - SPRINGER 7. ELECTRICAL ENGINEERING 8. Electronic materials 9. MICROSCOPY 10. Optical and Electronic Materials 11. OPTICAL MATERIALS 12. SOLID STATE PHYSICS 13. SPECTROSCOPY 14. Spectroscopy and Microscopy
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533.     
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TitleOriented Crystallization on Amorphous Substrates
Author(s)Givargizov, E.I
PublicationNew York, NY, Springer US, 1991.
DescriptionXII, 370 p : online resource
Abstract NotePresent-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc?? tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential
ISBN,Price9781489925602
Keyword(s)1. EBOOK 2. EBOOK - SPRINGER 3. ELECTRICAL ENGINEERING 4. Electronic materials 5. Optical and Electronic Materials 6. OPTICAL MATERIALS
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534.     
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TitleSemiconductors : Group IV Elements and III-V Compounds
Author(s)Madelung, Otfried
PublicationBerlin, Heidelberg, Springer Berlin Heidelberg, 1991.
DescriptionVII, 164 p : online resource
Abstract NoteThe frequent use of well known critical data handbooks like Beilstein, Gmelin and Landolt?? Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for having at their working place a comprehensive, high quality, but cheap collection of at least the basic data oftheirfield of interest the series "Data in Science and Technology"is started now. This first volume presents the most important data on two groups of semiconductors, the elements of the IVth group of the periodic system and the III-V compounds. All data were compiled from information on about 2500 pages in various volumes of the New Series of Landolt-Bornstein. For each critically chosen data set and each figure the original literature is cited. In addition, tables of content refer to the handbooks the data were drawn from. Thus the presentation of data in this volume is of the same high quality standard as in the original evaluated data collections. We hope to meet the needs of the physical community with the volumes of the series "Data in Science and Technology", forming bridges between the laboratory and additional information sources in the libraries
ISBN,Price9783642456817
Keyword(s)1. EBOOK 2. EBOOK - SPRINGER 3. Electronic materials 4. Optical and Electronic Materials 5. OPTICAL MATERIALS 6. PHYSICS 7. Physics, general
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535.     
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TitleTechniques and Concepts of High-Energy Physics VI
Author(s)Ferbel, Thomas
PublicationNew York, NY, Springer US, 1991.
Description448 p : online resource
Abstract NoteThe sixth Advanced Study Institute (ASI) on Techniques and Concepts of High Energy Physics was held at the Club St. Croix, in St. Croix, U.S. Virgin Islands. The ASI brought together a total of 70 participants, from 21 different countries. Despite logistical problems caused by hurricane Hugo, it was a very successful meeting. Hugo's destruction did little to dampen the dedication of the inspiring lecturers and the exceptional enthusiasm of the student body; nevertheless, the immense damage caused to the beautiful island was very saddening indeed. The primary support for the meeting was again provided by the Scientific Affairs Division of NATO. The ASI was cosponsored by the U.S. Department of Energy, by Fermilab, by the National Science Foundation, and by the University of Rochester. A special contribution from the Oliver S. and Jennie R. Donaldson Charitable Trust provided an important degree of flexibility, as well as support for worthy students from developing countries. As in the case of the previous ASls, the scientific program was designed for advanced graduate students and recent PhD recipients in experimental particle physics. The present volume of lectures should complement the material published in the first five ASls, and prove to be of value to a wider audience of physicists
ISBN,Price9781468460063
Keyword(s)1. EBOOK 2. EBOOK - SPRINGER 3. ELECTRICAL ENGINEERING 4. Electronic materials 5. Heavy ions 6. MATHEMATICAL PHYSICS 7. NUCLEAR PHYSICS 8. Nuclear Physics, Heavy Ions, Hadrons 9. Optical and Electronic Materials 10. OPTICAL MATERIALS 11. Theoretical, Mathematical and Computational Physics
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536.     
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TitleBand Structure Engineering in Semiconductor Microstructures
Author(s)Abram, R.A;Jaros, M
PublicationNew York, NY, Springer US, 1989.
Description400 p. 54 illus : online resource
Abstract NoteThis volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc?? tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures
ISBN,Price9781475707700
Keyword(s)1. CONDENSED MATTER 2. CONDENSED MATTER PHYSICS 3. CRYSTALLOGRAPHY 4. Crystallography and Scattering Methods 5. EBOOK 6. EBOOK - SPRINGER 7. ELECTRICAL ENGINEERING 8. Electronic materials 9. MICROSCOPY 10. Optical and Electronic Materials 11. OPTICAL MATERIALS 12. SOLID STATE PHYSICS 13. SPECTROSCOPY 14. Spectroscopy and Microscopy
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537.     
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TitleGrowth and Optical Properties of Wide-Gap II???VI Low-Dimensional Semiconductors
Author(s)McGill, T.C;Sotomayor Torres, C.M;Gebhardt, W
PublicationNew York, NY, Springer US, 1989.
Description349 p : online resource
Abstract NoteThis volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme. Semiconducting compounds formed by combining an element from column II of the periodic table with an element from column VI (so called II-VI Semiconductors) have long promised many optoelectronic devices operating in the visible region of the spectrum. However, these materials have encountered numerous problems including: large number of defects and difficulties in obtaining p- and n-type doping. Advances in new methods of material preparation may hold the key to unlocking the unfulfilled promises. During the workshop a full session was taken up covering the prospects for wide-gap II-VI Semiconductor devices, particularly light emitting ones. The growth of bulk materials was reviewed with the view of considering II-VI substrates for the novel epitaxial techniques such as MOCVD, MBE, ALE, MOMBE and ALE-MBE. The controlled introduction of impurities during non-equilibrium growth to provide control of the doping type and conductivity was emphasized
ISBN,Price9781468456615
Keyword(s)1. Applied and Technical Physics 2. EBOOK 3. EBOOK - SPRINGER 4. Electronic materials 5. Optical and Electronic Materials 6. OPTICAL MATERIALS 7. PHYSICS
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538.     
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TitleElectronic Structure of Disordered Alloys, Surfaces and Interfaces
Author(s)Turek, Ilja;Drchal, V??clav;Kudrnovsk??, Josef;Sob, Mojm??r;Weinberger, Peter
PublicationNew York, NY, Springer US, 1997.
DescriptionXV, 317 p : online resource
Abstract NoteAt present, there is an increasing interest in the prediction of properties of classical and new materials such as substitutional alloys, their surfaces, and metallic or semiconductor multilayers. A detailed understanding based on a thus of the utmost importance for fu?? microscopic, parameter-free approach is ture developments in solid state physics and materials science. The interrela?? tion between electronic and structural properties at surfaces plays a key role for a microscopic understanding of phenomena as diverse as catalysis, corrosion, chemisorption and crystal growth. Remarkable progress has been made in the past 10-15 years in the understand?? ing of behavior of ideal crystals and their surfaces by relating their properties to the underlying electronic structure as determined from the first principles. Similar studies of complex systems like imperfect surfaces, interfaces, and mul?? tilayered structures seem to be accessible by now. Conventional band-structure methods, however, are of limited use because they require an excessive number of atoms per elementary cell, and are not able to account fully for e.g. substitu?? tional disorder and the true semiinfinite geometry of surfaces. Such problems can be solved more appropriately by Green function techniques and multiple scattering formalism
ISBN,Price9781461562559
Keyword(s)1. Characterization and Evaluation of Materials 2. EBOOK 3. EBOOK - SPRINGER 4. Electronic materials 5. MATERIALS SCIENCE 6. MATHEMATICAL PHYSICS 7. MICROSCOPY 8. Optical and Electronic Materials 9. OPTICAL MATERIALS 10. SOLID STATE PHYSICS 11. SPECTROSCOPY 12. Spectroscopy and Microscopy 13. Theoretical, Mathematical and Computational Physics
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539.     
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TitlePhysics of Submicron Devices
Author(s)Ferry, David K;Grondin, Robert O
PublicationNew York, NY, Springer US, 1991.
DescriptionXIII, 402 p : online resource
Abstract NoteThe purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand?? ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips
ISBN,Price9781461532842
Keyword(s)1. CONDENSED MATTER 2. CONDENSED MATTER PHYSICS 3. CRYSTALLOGRAPHY 4. Crystallography and Scattering Methods 5. EBOOK 6. EBOOK - SPRINGER 7. ELECTRICAL ENGINEERING 8. Electronic materials 9. MICROSCOPY 10. Optical and Electronic Materials 11. OPTICAL MATERIALS 12. SOLID STATE PHYSICS 13. SPECTROSCOPY 14. Spectroscopy and Microscopy
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540.    
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TitleTechniques and Concepts of High-Energy Physics VII
Author(s)Ferbel, Thomas
PublicationNew York, NY, Springer US, 1994.
DescriptionX, 266 p : online resource
Abstract NoteThe seventh Advanced Study Institute (ASI) on Techniques and Concepts of High Energy Physics was held for the second time at the Club St. Croix, in St. Croix, U.S. Virgin Islands. The ASI brought together a total of 75 participants, from 19 countries. The primary support for the meeting was again provided by the Scientific Affairs Division of NATO. The ASI was cosponsored by the U.S. Department of Energy, by Fermilab, by the National Science Foundation, and by the University of Rochester. A special contribution from the Oliver S. and Jennie R. Donaldson Charitable Trust provided an important degree of flexibility, as well as support for worthy students from developing countries. As in the case of the previous ASIs, the scientific program was designed for advanced graduate students and recent PhD recipients in experimental particle physics. The present volume of lectures should complement the material published in the first six ASIs, and prove to be of value to a wider audience of physicists
ISBN,Price9781461524199
Keyword(s)1. EBOOK 2. EBOOK - SPRINGER 3. ELECTRICAL ENGINEERING 4. Electronic materials 5. Heavy ions 6. MATHEMATICAL PHYSICS 7. NUCLEAR PHYSICS 8. Nuclear Physics, Heavy Ions, Hadrons 9. Optical and Electronic Materials 10. OPTICAL MATERIALS 11. Theoretical, Mathematical and Computational Physics
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